參數(shù)資料
型號(hào)： FD400O8N
廠商： Electronic Theatre Controls, Inc.
元件分類(lèi)： 圓形連接器
英文描述： Circular Connector; No. of Contacts:8; Series:; Body Material:Aluminum; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:16-8; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No
中文描述： 繼電器HERMETIQUE 2逆轉(zhuǎn)錄雙重間斷期10 A/56嚇
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 110K
代理商： FD400O8N
Technische Information / Technical Information
FD 400 R 33 KF2
IGBT-Module
IGBT-Modules
Datenblatt
data sheet
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 400 A, V
CC
= 1800V
V
GE
= ±15V, R
G
= 3,6
, C
GE
= 68nF, T
vj
= 25°C
t
d,on
-
370
-
ns
V
GE
= ±15V, R
G
= 3,6
, C
GE
= 68nF, T
vj
= 125°C
-
350
-
ns
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 400 A, V
CC
= 1800V
V
GE
= ±15V, R
G
= 3,6
, C
GE
= 68nF, T
vj
= 25°C
t
r
-
250
-
ns
V
GE
= ±15V, R
G
= 3,6
, C
GE
= 68nF, T
vj
= 125°C
-
270
-
ns
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 400 A, V
CC
= 1800V
V
GE
= ±15V, R
G
= 3,6
, C
GE
= 68nF, T
vj
= 25°C
t
d,off
-
1550
-
ns
V
GE
= ±15V, R
G
= 3,6
, C
GE
= 68nF, T
vj
-
1700
-
ns
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 400 A, V
CC
= 1800V
V
GE
= ±15V, R
G
= 3,6
, C
GE
= 68nF, T
vj
= 25°C
t
f
-
200
-
ns
V
GE
= ±15V, R
G
= 3,6
, C
GE
= 68nF, T
vj
= 125°C
-
200
-
ns
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 400 A, V
CC
= 1800V, V
GE
= 15V
R
G
= 3,6
, C
GE
= 68 nF, T
vj
= 125°C, L
S
= 60nH
E
on
-
960
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 400 A, V
CC
= 1800V, V
GE
= 15V
R
G
= 3,6
, C
GE
= 68 nF, T
vj
= 125°C, L
S
= 60nH
E
off
-
510
-
mWs
Kurzschluverhalten
SC Data
t
P
≤
10μsec, V
GE
≤
15V
T
Vj
≤
125°C, V
CC
=2500V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
-
2000
-
A
Modulinduktivitt
stray inductance module
IGBT (Zweig / arm 1 )
Diode (Zweig / arm 2)
L
sCE
-
-
25
25
-
-
nH
nH
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
T = 25°C, IGBT (Zweig / arm 1 )
T = 25°C, Diode (Zweig / arm 2)
R
CC’+EE’
-
0,37
0,39
-
-
m
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 400 A, V
GE
= 0V, T
vj
= 25°C
V
F
-
2,80
3,50
V
I
F
= 400 A, V
GE
= 0V, T
vj
= 125°C
-
2,80
3,50
V
Sperrstrom
reverse current
V
CE
= 3300V, T
vj
= 25°C, Zweig / arm 2
I
R
-
0,005
0,8
mA
V
CE
= 3300V, T
vj
= 125°C, Zweig / arm 2
-
2
10
mA
Rückstromspitze
peak reverse recovery current
I
F
= 400 A, - di
F
/dt = 1200 A/μsec
V
R
= 1800V, VGE = -10V, T
vj
= 25°C
I
RM
-
330
-
A
V
R
= 1800V, VGE = -10V, T
vj
= 125°C
-
350
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 400 A, - di
F
/dt = 1200 A/μsec
V
R
= 1800V, VGE = -10V, T
vj
= 25°C
Q
r
-
235
-
μAs
V
R
= 1800V, VGE = -10V, T
vj
= 125°C
-
440
-
μAs
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 400 A, - di
F
/dt = 1200 A/μsec
V
R
= 1800V, VGE = -10V, T
vj
= 25°C
E
rec
-
245
-
mWs
V
R
= 1800V, VGE = -10V, T
vj
= 125°C
-
500
-
mWs
2 (9)
Datenblatt FD 400 R 33 KF2
04.10.99
相關(guān)PDF資料
PDF描述
FD400O8V Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:16-99 RoHS Compliant: No
FD400A8A M39012 MIL RF CONNECTOR
FD400A8B M39012 MIL RF CONNECTOR
FD400G8A RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc
FD400G8B RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FD400O8V 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc
FD400R07PE4RB6BOSA1 制造商:Infineon Technologies AG 功能描述:
FD400R12KE3 功能描述:IGBT 模塊 N-CH 1.2KV 580A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FD400R12KE3_B5 功能描述:IGBT 模塊 IGBT Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FD400R12KF4 功能描述:IGBT 模塊 1200V 400A CHOPPER RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*