參數(shù)資料
型號(hào)： FBS10-06SC
廠商： IXYS CORP
元件分類： 參考電壓二極管
英文描述： Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC
中文描述： 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
封裝： ISOPLUS, I4PAC-5
文件頁數(shù)： 1/2頁
文件大?。?/td> 32K
代理商： FBS10-06SC
2002 IXYS All rights reserved
1 - 2
2
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
I
D(AV)M
= 6.6 A
C
junction
= 9 pF
= 600 V
Silicon Carbide
Schottky
Rectifier Bridge
in ISOPLUS i4-PAC
TM
1
5
Advanced Technical Information
FBS 10-06SC
Features
Silicon Carbide Schottky Diodes
- no reverse recovery at turn off - only
charge of junction capacity - soft turn
off waveform
- no forward recovery at turn on
- switching behaviour independent of
temperature
- low leakage current
ISOPLUS i4-PAC(TM) package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
output rectifiers of high end switched
mode power supplies
other high frequency rectifiers
Rectifier Bridge
Symbol
Conditions
Maximum Ratings
V
RRM
600
V
I
FAV
I
D(AV)M
I
FSM
T
C
= 90°C; sine 180° (per diode)
T
C
= 90°C
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
3
A
A
A
6.6
12
P
tot
T
C
= 25°C
(per diode)
19
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 4 A;
T
VJ
= 25°C
T
VJ
= 125°C
1.7
1.9
2.0
V
V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C
T
VJ
= 125°C
0.2
mA
mA
0.04
C
J
V
R
= 400 V;
T
VJ
= 125°C
9
pF
R
thJC
R
thJS
(per diode)
8 K/W
K/W
11.5
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
相關(guān)PDF資料
PDF描述
FBS16-06SC Silicon Carbide Schottky Rectifier Bridge
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