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參數(shù)資料
| 型號： | FBS16-06SC |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Carbide Schottky Rectifier Bridge |
| 中文描述： | 5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 32K |
| 代理商： | FBS16-06SC |
2002 IXYS All rights reserved
1 - 2
2
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
I
D(AV)M
= 11 A
C
junction
= 21 pF
= 600 V
Silicon Carbide
Schottky
Rectifier Bridge
in ISOPLUS i4-PAC
TM
1
5
Advanced Technical Information
FBS 16-06SC
Features
Silicon Carbide Schottky Diodes
- no reverse recovery at turn off - only
charge of junction capacity - soft turn
off waveform
- no forward recovery at turn on
- switching behaviour independent of
temperature
- low leakage current
ISOPLUS i4-PAC(TM) package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
output rectifiers of high end switched
mode power supplies
other high frequency rectifiers
Rectifier Bridge
Symbol
Conditions
Maximum Ratings
V
RRM
600
V
I
FAV
I
D(AV)M
I
FSM
T
C
= 90°C; sine 180° (per diode)
T
C
= 90°C
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
5
A
A
A
11
20
P
tot
T
C
= 25°C
(per diode)
27
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 6 A;
T
VJ
= 25°C
T
VJ
= 125°C
1.5
1.6
1.8
V
V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C
T
VJ
= 125°C
0.2
mA
mA
0.05
C
J
V
R
= 400 V;
T
VJ
= 125°C
21
pF
R
thJC
R
thJS
(per diode)
5.6 K/W
8.6
K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
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