參數(shù)資料
型號(hào): FB1J3P
廠商: NEC Corp.
英文描述: COMPOUND TRANSISTOR
中文描述: 復(fù)合晶體管
文件頁數(shù): 2/8頁
文件大?。?/td> 111K
代理商: FB1J3P
Data Sheet D16180EJ1V0DS
2
FB1 SERIES
FB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
300
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
Collector saturation voltage
V
CE(sat)
**
I
C
= 0.5 A, I
B
= 5 mA
0.27
0.4
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
k
E-to-B resistance
R
2
7
10
13
**PW
350
μ
s, duty cycle
2 %
FB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
150
400
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
700
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
600
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.5 A
0.2
0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.62
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
**PW
350
μ
s, duty cycle
2 %
FB1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
80
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
100
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.5 A
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
0.4
V
Low level input voltage
V
IL
**
0.3
V
Input resistance
R
1
0.7
1.0
1.3
k
E-to-B resistance
R
2
0.7
1.0
1.3
k
**PW
350
μ
s, duty cycle
2 %
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