參數(shù)資料
型號: FB1L3N
廠商: NEC Corp.
英文描述: COMPOUND TRANSISTOR
中文描述: 復(fù)合晶體管
文件頁數(shù): 1/8頁
文件大小: 111K
代理商: FB1L3N
2002
Document No. D16180EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
FB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Up to 0.7 A current drive available
On-chip bias resistor
Low power consumption during drive
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FB1 SERIES LISTS
Products
Marking
R
1
(K
)
R
2
(K
)
FB1A4A
P30
10
FB1L2Q
P31
0.47
4.7
FB1A3M
P32
1.0
1.0
FB1F3P
P33
2.2
10
FB1J3P
P36
3.3
10
FB1L3N
P34
4.7
10
FB1A4M
P35
10
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
25
V
Emitter to base voltage
V
EBO
10
V
Collector current (DC)
I
C(DC)
0.7
A
Collector current (Pulse)
I
C(pulse)
*
1.0
A
Base current (DC)
I
B(DC)
20
mA
Total power dissipation
P
T
200
mW
°
C
°
C
Junction temperature
T
j
150
Storage temperature
* PW
10 ms, duty cycle
50 %
T
stg
55 to +150
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