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參數(shù)資料
| 型號(hào)： | FB1A4M |
| 廠商： | NEC Corp. |
| 英文描述： | COMPOUND TRANSISTOR |
| 中文描述： | 復(fù)合晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 111K |
| 代理商： | FB1A4M |
Data Sheet D16180EJ1V0DS
3
FB1 SERIES
FB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
300
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.3 A
0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
1.54
2.2
2.86
k
k
E-to-B resistance
R
2
7
10
13
**PW
≤
350
μ
s, duty cycle
≤
2 %
FB1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
300
600
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
700
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
600
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.2 A
0.14
0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.6
0.3
V
k
Input resistance
R
1
2.31
3.3
4.29
E-to-B resistance
R
2
7
10
13
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
FB1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
300
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.2 A
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Low level input voltage
V
IL
**
0.3
V
Input resistance
R
1
3.29
4.7
6.11
k
E-to-B resistance
R
2
7
10
13
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FB1A4M-T1B | COMPOUND TRANSISTOR |
| FB1F3P | COMPOUND TRANSISTOR |
| FB1J3P | COMPOUND TRANSISTOR |
| FB1L2Q | COMPOUND TRANSISTOR |
| FB1L3N | COMPOUND TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FB1A4M-T1B | 制造商:NEC 制造商全稱:NEC 功能描述:COMPOUND TRANSISTOR |
| FB1A4M-T1B-A | 制造商:Renesas Electronics 功能描述:NPN 25V 700mA 制造商:Renesas Electronics 功能描述:NPN 25V 700mA Cut Tape |
| FB1F3P | 制造商:NEC 制造商全稱:NEC 功能描述:COMPOUND TRANSISTOR |
| FB1F3P-T1B-A | 制造商:Renesas Electronics 功能描述:Trans Digital BJT NPN 25V 700mA 3-Pin SC-59 T/R Cut Tape |
| FB1J3P | 制造商:NEC 制造商全稱:NEC 功能描述:COMPOUND TRANSISTOR |
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