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參數(shù)資料
| 型號(hào)： | F1001C |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | F1001C |
RF CHARACTERISTICS ( WATTS OUTPUT )
20
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier
Base Stations, Broadcast FM/AM,
MRI, Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
20Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
50Watts
3.13
C
o
200
-65
to 150
2 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
dB
%
Relative
16
60
0.2
20:1
Idq =
Idq =
Idq =
0.2
0.2
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 175MHz
F = 175MHz
F = 175MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
1
1
7
1
0.8
1
5.5
33
4
20
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.05
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.1
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 4
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F1001C
polyfet rf devices
8/1/97
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F1001 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1002 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F100314 | 1MM MINI CARD GUIDE ASSEMBLY |
| F100322 | Low Power 9-Bit Buffer |
| F100324 | LOW POWER HEX TTL-TO-ECL TRANSLATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F1002 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1003 | 制造商:Pass & Seymour/Legrand 功能描述:A/V MODULATOR 3 CHANNEL GF |
| F100302DCQB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Quint 2-input OR/NOR Gate |
| F100304 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LOW POWER QUINT AND / NAND GATE |
| F100314 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LOW POWER QUINT DIFFERENTIAL LINE RECEIVER |
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