| 型號(hào): | F100166 | 
| 廠商: | National Semiconductor Corporation | 
| 英文描述: | 9-BIT COMPARATOR | 
| 中文描述: | 9位比較 | 
| 文件頁(yè)數(shù): | 1/5頁(yè) | 
| 文件大?。?/td> | 120K | 
| 代理商: | F100166 | 

| 相關(guān)PDF資料 | PDF描述 | 
|---|---|
| F100180 | CONN 2X12 2MM SHROUDED | 
| F1001C | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 
| F1001 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 
| F1002 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 
| F100314 | 1MM MINI CARD GUIDE ASSEMBLY | 
| 相關(guān)代理商/技術(shù)參數(shù) | 參數(shù)描述 | 
|---|---|
| F10016H60AP | 制造商:Panasonic Industrial Company 功能描述:BASE | 
| F100171 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:TRIPLE 4 - INPUT MULTIPLEXER WITH ENABLE | 
| F100180 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:HIGH-SPEED 6-BIT ADDER | 
| F100183 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:2 X 8-BIT RECODE MULTIPLIER | 
| F1001C | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |