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參數(shù)資料
| 型號： | ES29BDS800ET-90RTGI |
| 廠商： | 優(yōu)先(蘇州)半導體有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引導扇區(qū)閃存 |
| 文件頁數(shù)： | 43/51頁 |
| 文件大?。?/td> | 697K |
| 代理商： | ES29BDS800ET-90RTGI |
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ESI
43
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
10
sec
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
8
sec
Byte Program Time
6
150
us
Exclude system level overhead (Note 5)
Word Program Time
8
210
us
Chip Program Time (Note 3)
Byte Mode
3.1
9.3
sec
Word Mode
2.1
6.3
Notes:
1. Typical program and erase times assume the following conditions: 25
o
C, 3.0V Vcc, 10,000 cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90
o
C, Vcc = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times
listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles
.
Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#)
- 1.0V
12.5 V
Input voltage with respect to Vss on all I/O pins
- 1.0V
Vcc + 1.0 V
Vcc Current
- 100 mA
+100 mA
Note:
Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
FBGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
FBGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
FBGA
3.9
4.7
pF
Table 17. LATCHUP CHARACTERISTICS
Table 18. TSOP, SO, AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested. 2. Test conditions TA = 25
o
C, f=1.0MHz.
Parameter Description
Test conditions
Min
Unit
Minimum Pattern Data Retention Time
150
o
C
10
Years
125
o
C
20
Years
Table 19. DATA RETENTION
Table 16. ERASE AND PROGRAMMING PERFORMANCE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ES29BDS800ET-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800F-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800F-70RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800F-70WCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800FB-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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