參數(shù)資料
型號(hào)： ES29BDS160DB-12TG
廠商： 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述： 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 16兆（2米x 8/1M × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 53/54頁(yè)
文件大?。?/td> 726K
代理商： ES29BDS160DB-12TG
ESI
53
Rev. 1C Jan 5 , 2006
ES29LV160D
Excel Semiconductor inc.
Document Title
16M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Mar. 15, 2004
Initial Release Version.
Rev. 0B
Apr. 23, 2004
1. The bias condtion of RESET# in Table 1 for A9 high-Voltage
method
is changed from V
ID
to H.
2. The bias condition of A9 in Table
1
for A9 high-Voltage method
is added.
3. The typical byte and word program time are changed from 5us/
7us to 6us/8us.
4. The dimension of FBGA is changed from 8 x 9mm to 6 x 8mm
Rev. 0C
May. 21, 2004
1. 80R product is removed and 70R product is newly added.
Rev. 1A
Dec. 1, 2004
1. The preliminary is removed from the datasheet.
2. The 44 pin SO is removed.
3. The Icc3 (max) is changed from 5uA to 10uA.
4. The Icc4 (max) is changed from 5uA to 10uA.
5. The Icc5 (max) is changed from 5uA to 10uA.
6. The overall thickness of FBGA , A (max), is changed from 1.20
to 1.10. Therefore, ball height (A1) and body thickness (A2)
also is changed accordingly.
7. The ball diameter of FBGA, b(min), b(nom), b(max), is changed
from 0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40 respectively.
Rev. 1B
Dec. 13, 2004
1. The arrow from Erase Suspend Read to Read is changed to
Sector Erase.
2. V
LKO
(min), 2.3V is added
相關(guān)PDF資料
PDF描述
ES29DL320ET-80TG 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL320FB-12TG 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL320FT-80TG 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400EB-12TG 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL400FB-12TG 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ES29BDS160DB-80RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS160DT-70WC 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS160DT-90RTGI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS160DT-90TGI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS160E-12RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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