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參數(shù)資料
| 型號(hào)： | EPA025A-70 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Efficiency Heterojunction Power FET |
| 中文描述： | 高效率的異質(zhì)結(jié)功率場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 48K |
| 代理商： | EPA025A-70 |
6
6
'
*
$
0
Excelics
EPA025A-70
DATA SHEET
High Efficiency Heterojunction Power FET
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+21.5dBm TYPICAL OUTPUT POWER
8.0dB TYPICAL POWER GAIN AT 18GHz
TYPICAL 0.85dB NOISE FIGURE AND 11.0dB
ASSOCIATED GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss f=12GHz
Noise Figure
Vds=2V, Ids=15mA
Associated Gain
Vds=2V, Ids=15mA
f=12GHz
f=18GHz
f=12GHz
f=18GHz
19.5
21.5
21.5
11.0
8.0
47
0.85
dBm
G
1dB
9.5
dB
PAE
%
NF
f=12GHz
dB
Ga
f=12GHz
11.0
dB
Idss
Saturated Drain Current Vds=3V, Vgs=0V
40
75
105
mA
Gm
Transconductance Vds=3V, Vgs=0V
50
80
mS
Vp
Pinch-off Voltage Vds=3V, Ids=1.0mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-9
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-6
-14
V
Rth
Thermal Resistance
370
*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals
.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
ABSOLUTE
1
10V
-6V
Idss
12mA
18dBm
175
o
C
-65/175
o
C
370mW
CONTINUOUS
2
6V
-3V
50mA
2mA
@ 3dB Compression
150
o
C
-65/150
o
C
310mW
All Dimensions In mils.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| EPA030B | 制造商:EXCELICS 制造商全稱:EXCELICS 功能描述:High Performance Heterojunction Dual-Gate FET |
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| EPA030CV | 制造商:EXCELICS 制造商全稱:EXCELICS 功能描述:High Efficiency Heterojunction Power FET |
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