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參數(shù)資料
| 型號： | EPA090A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Efficiency Heterojunction Power FET |
| 中文描述： | 高效率的異質(zhì)結(jié)功率場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 41K |
| 代理商： | EPA090A |
Excelics
EPA090A
DATA SHEET
High Efficiency Heterojunction Power FET
+28.0dBm TYPICAL OUTPUT POWER
10.0dB TYPICAL POWER GAIN AT 18GHz
0.3 X 900 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 20mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
MIN
26.5
11.5
TYP
28.0
28.0
13.0
10.0
45
MAX
UNIT
P
1dB
dBm
G
1dB
dB
PAE
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
160
270
380
mA
Gm
Transconductance Vds=3V, Vgs=0V
180
290
mS
Vp
Pinch-off Voltage Vds=3V, Ids=3.0mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
45
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
ABSOLUTE
1
12V
-8V
Idss
45mA
26dBm
175
o
C
-65/175
o
C
3.0 W
CONTINUOUS
2
8V
-3V
315mA
7.5mA
@3dB Compression
150
o
C
-65/150
o
C
2.5W
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
660
50
120
320
48
100
95
50
80
40
D
G
D
D
G
G
S
S
S
S
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