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| 型號(hào)： | EN29LV640TT-90BC |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 64兆位（8米× 8位/分x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁(yè)數(shù)： | 49/53頁(yè) |
| 文件大小： | 495K |
| 代理商： | EN29LV640TT-90BC |
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ERASE AND PROGRAM PERFORMANCE
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
Limits
Max
Parameter
Typ
Unit
Comments
Sector Erase Time
0.5
10
Sec
Chip Erase Time
64
Sec
Accelerated Word Program Time
5
120
μS
Word Programming Time
8
300
μS
Chip Programming Time
20
60
Sec
Excludes 00h programming prior to
erasure
Erase/Program Endurance
100K
Cycles
Minimum 100K cycles
Note:
Typical Conditions are room temperature, 3V and checkboard pattern programmed.
LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to V
B
ss
(including A9, Reset and OE#)
Min
Max
B
on all pins except I/O pins
-1.0 V
12.0 V
Input voltage with respect to V
B
ss
B
on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note:
These are latch up characteristics and the device should never be put under these conditions. Refer to
Absolute Maximum ratings for the actual operating limits.
48-PIN TSOP PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
C
B
IN
Input Capacitance
Test Setup
V
B
IN
Typ
Max
Unit
B
B
= 0
6
7.5
pF
C
B
OUT
B
Output Capacitance
V
B
OUT
B
= 0
8.5
12
pF
C
B
IN2
B
Control Pin Capacitance
V
B
IN
B
= 0
7.5
9
pF
Note:
Test conditions are Temperature = 25°C and f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Minimum Pattern Data Retention Time
125°C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV640TT-90BCP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640TT-90BI | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640TT-90BIP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640TT-90TC | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640TT-90TCP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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