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| 型號(hào)： | EN29LV640TB-90BCP |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 64兆位（8米× 8位/分x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁(yè)數(shù)： | 36/53頁(yè) |
| 文件大小： | 495K |
| 代理商： | EN29LV640TB-90BCP |
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DC Characteristics
Table 11.
DC Characteristics
(T
B
a
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
B
= 0°C to 70°C or - 40°C to 85°C; V
B
CC
B
= 2.7-3.6V)
Notes:
1. BYTE# pin can also be GND
± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
they draw power if not at full CMOS supply voltages.
2. Maximum
I
B
CC
B
specifications are tested with
Vcc
=
Vcc max.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
B
LI
I
B
LO
B
Input Leakage Current
0V
≤
V
B
IN
0V
≤
V
B
OUT
B
≤
Vcc
±5
μA
B
Output Leakage Current
B
≤
Vcc
±5
μA
Supply Current (read) CMOS Byte
9
16
mA
I
B
CC1
B
(read) CMOS Word
CE# = V
B
IL
B
; OE# = V
B
IH ;
B
f = 5MHZ
9
16
mA
I
B
CC2
B
Supply Current (Program or Erase)
CE# = V
B
IL
V
B
IH
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
B
, OE# =
B
, WE# = V
B
IL
B
20
30
mA
I
B
CC3
B
Supply Current (Standby - CMOS)
1
5.0
μA
I
B
CC4
B
Reset Current
RESET# = Vss ± 0.3V
1
5.0
mA
I
B
CC5
B
Automatic Sleep Mode
V
B
IH
V
B
IL
B
= Vcc ± 0.3V
B
= Vss ± 0.3V
1
5.0
uA
V
B
IL
B
Input Low Voltage
-0.5
0.7 x
Vcc
0.8
Vcc ±
0.3
V
V
B
IH
B
Input High Voltage
V
V
B
HH
B
#WP/ACC Voltage (Write Protect /
Program Acceleration)
Voltage for Autoselect or
Temporary Sector Unprotect
Output Low Voltage
10.5
11.5
V
V
B
ID
B
10.5
11.5
V
V
B
OL
B
I
B
OL
B
= 4.0 mA
0.45
V
Output High Voltage TTL
I
B
OH
B
= -2.0 mA
0.85 x
Vcc
Vcc -
0.4V
V
V
B
OH
B
Output High Voltage CMOS
I
B
OH
B
= -100
A,
V
V
B
LKO
B
Supply voltage (Erase and
Program lock-out)
2.3
2.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV640TB-90BI | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640TB-90BIP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640TB-90TC | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640TB-90TCP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640TB-90TI | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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