參數(shù)資料
型號: EN29LV640TB-90BCP
廠商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)閃存引導扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 30/53頁
文件大?。?/td> 495K
代理商: EN29LV640TB-90BCP
EMBEDDED ALGORITHMS
Flowchart 1. Embedded Program
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
START
Write Program
Command Sequence
(shown below)
Data# Poll Device
Last
Address
Programming Done
Increment
Address
No
Yes
Verify Data
Flowchart 2. Embedded Program Command Sequence
(See the Command Definitions section for more information.)
2AAH / 55H
555H / AAH
555H / A0H
PROGRAM ADDRESS / PROGRAM DATA
相關(guān)PDF資料
PDF描述
EN29LV640TB-90BI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TB-90BIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TB-90TC 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TB-90TCP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TB-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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