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參數(shù)資料
| 型號： | EN25F80-75VCP |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 15/33頁 |
| 文件大?。?/td> | 469K |
| 代理商： | EN25F80-75VCP |
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The instruction sequence is shown in Figure 11. If more than 256 bytes are sent to the device, previously
latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within
the same page. If less than 256 Data bytes are sent to device, they are correctly programmed at the
requested addresses without having any effects on the other bytes of the same page.
Chip Select (CS#) must be driven High after the eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Page Program cycle (whose duration is t
PP
) is
initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page
Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the
Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3) is not executed.
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. D, Issue Date: 2007/05/16
EN25F80
Sector Erase (SE) (20h)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see Table 2) is a
valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 12.. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN25F80-75VI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F80-75VIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P05 | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P05-100GC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P05-100GCP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN25F80-75VI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:8 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F80-75VIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:8 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25LF05 | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25LF05-75GI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25LF05-75GIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector |
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