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參數(shù)資料
| 型號： | EMC3DXV5T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual Common Base-Collector Bias Resistor Transistors(雙共基極-集電極偏置電阻晶體管) |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, CASE 463B-01, 5 PIN |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 96K |
| 代理商： | EMC3DXV5T1 |
Semiconductor Components Industries, LLC, 2004
October, 2005 Rev. 4
1
Publication Order Number:
EMC2DXV5T1/D
EMC2DXV5T1,
EMC3DXV5T1,
EMC4DXV5T1,
EMC5DXV5T1
Preferred Devices
Dual Common
BaseCollector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1 series,
two complementary BRT devices are housed in the SOT553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are PbFree Devices
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Rating
Symbol
V
CBO
V
CEO
I
C
Value
50
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
50
Vdc
Collector Current
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING DIAGRAM
Preferred
devices are recommended choices for future use
and best overall value.
4
5
Q1
Q2
R1
R1
R2
R2
3
1
2
http://onsemi.com
SOT553
CASE 463B
1
5
Ux M
Ux = Specific Device Code
x = C, 3, E, or 5
M
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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PDF描述 |
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| EMC4DXV5T1 | Dual Common Base-Collector Bias Resistor Transistors(雙共基極-集電極偏置電阻晶體管) |
| EMC | Pulse Withstanding Fusible Flameproof Metal Film Resistors |
| EMF23XV6T5 | Dual Transistor-Power Management(雙晶體管-電源管理) |
| EMF5XV6T5 | Power Management, Dual Transistors(電源管理，雙晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EMC3DXV5T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V Dual Common Base Collector NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMC3DXV5T5 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V Dual Common Base RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMC3DXV5T5G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V Dual Common Base Collector NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMC4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SMT |
| EMC4001 | 制造商:SMSC 制造商全稱:SMSC 功能描述:USB 2.0 High-Speed 4-Port Hub Controller |
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