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參數(shù)資料
| 型號(hào)： | EMG2DXV5T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 463B-01, 5 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 69K |
| 代理商： | EMG2DXV5T1 |
Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 0
1
Publication Order Number:
EMG5DXV5/D
EMG2DXV5T1,
EMG5DXV5T1
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a baseemitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT553 package which is designed for low power surface mount
applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
Available in 8 mm, 7 inch Tape and Reel
LeadFree Solder Plating
PbFree Packages are Available
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
V
CEO
I
C
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
°
C/W
Thermal Resistance
Junction-to-Ambient
R
JA
540 (Note 1)
370 (Note 2)
°
C/W
Thermal Resistance
Junction-to-Lead
R
JL
264 (Note 1)
287 (Note 2)
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
SOT553
CASE 463B
Preferred
devices are recommended choices for future use
and best overall value.
NPN SILICON
BIAS RESISTOR
TRANSISTORS
MARKING
DIAGRAM
xx = Device Code
xx= UF (EMG5)
UP (EMG2)
Date Code
PbFree Package
M =
=
XX M
http://onsemi.com
1
5
1
5
(4)
R1
R2
R1
(3)
(1)
(2)
(5)
R2
DT
r2
DT
r1
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EMG2DXV5T1G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 50V Dual BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMG2DXV5T5 | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 50V Dual BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMG2DXV5T5G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 50V Dual BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMG2T2R | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 DUAL NPN 50V 30MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMG3 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Emitter common (dual digital transistors) |
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