參數(shù)資料
型號： EMC2DXV5T5
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： Dual Common Base-Collector Bias Resistor Transistors
中文描述： 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： LEAD FREE, CASE 463B-01, 5 PIN
文件頁數(shù)： 1/10頁
文件大?。?/td> 72K
代理商： EMC2DXV5T5
Semiconductor Components Industries, LLC, 2003
September, 2003 Rev. 1
1
Publication Order Number:
EMC2DXV5T1/D
EMC2DXV5T1,
EMC5DXV5T1
Preferred Devices
Dual Common
BaseCollector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC5DXV5T1 series,
two complementary BRT devices are housed in the SOT553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
Lead Free
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
V
CEO
I
C
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
357 (Note 1)
2.9 (Note 1)
mW
mW/
°
C
Thermal Resistance
Junction-to-Ambient
R
JA
350 (Note 1)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
500 (Note 1)
4.0 (Note 1)
mW
mW/
°
C
Thermal Resistance
Junction-to-Ambient
R
JA
250 (Note 1)
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
1. FR4 @ Minimum Pad
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING
DIAGRAM
Preferred
devices are recommended choices for future use
and best overall value.
4
5
Q1
Q2
R1
R1
R2
R2
3
1
2
http://onsemi.com
SOT553
CASE 463B
xx D
1
5
1
5
xx = Specific Device Code
D
= Date Code
Device
Package
Shipping
ORDERING INFORMATION
EMC2DXV5T1
SOT553
4 mm pitch
4000/Tape & Reel
EMC2DXV5T5
SOT553
2 mm pitch
8000/Tape & Reel
EMC5DXV5T1
SOT553
4 mm pitch
4000/Tape & Reel
EMC5DXV5T5
SOT553
2 mm pitch
8000/Tape & Reel
相關PDF資料
PDF描述
EMC5DXV5T1 Dual Common Base-Collector Bias Resistor Transistors
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相關代理商/技術參數(shù)
參數(shù)描述
EMC2DXV5T5G 功能描述:開關晶體管 - 偏壓電阻器 50V Dual Common Base Collector NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
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EMC30DRAH 功能描述:CONN EDGECARD 60POS R/A .100 SLD RoHS:是 類別:連接器，互連式 >> Card Edge 系列:- 標準包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:43 位置數(shù):86 卡厚度:0.031"（0.79mm） 行數(shù):2 間距:0.100"（2.54mm） 特點:- 安裝類型:面板安裝 端子:焊接孔眼 觸點材料:磷青銅 觸點表面涂層:金 觸點涂層厚度:10µin（0.25µm） 觸點類型：:全波紋管 顏色:藍 包裝:托盤 法蘭特點:側(cè)面安裝開口，無螺紋，0.125"（3.18mm）直徑 材料 - 絕緣體:聚對苯二甲酸丁二酯（PBT） 工作溫度:-65°C ~ 125°C 讀數(shù):雙
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