參數(shù)資料
型號: EM39LV040-45RFMI
廠商: ELAN Microelctronics Corp .
英文描述: 4M (512Kx8) Bits Flash Memory
中文描述: 4分(512Kx8)位快閃記憶體
文件頁數(shù): 9/21頁
文件大?。?/td> 275K
代理商: EM39LV040-45RFMI
EM39LV040
4M (512Kx8) Bits Flash Memory
SPECIFICATION
DC CHARACTERISTICS (CMOS Compatible)
Parameter
Description
Test Conditions
Min
Max
Unit
I
DD
Power Supply Current
Read
Program and Erase
Address Input =V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
,
20
30
mA
mA
I
SB
Standby V
DD
Current
CE#=V
IHC
, V
DD
=V
DD
Max
10
μ
A
I
LI
I
LO
Input Leakage Current
Output Leakage Current
V
IN
=GND to V
DD,
V
DD
=V
DD
Max
V
OUT
=GND to V
DD,
V
DD
=V
DD
Max
1
10
μ
A
μ
A
V
IL
V
IH
V
IHC
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
0.7 V
DD
V
DD
-0.3
0.8
V
V
V
V
OL
V
OH
Output Low Voltage
Output High Voltage
I
OL
=100
μ
A, V
DD
=V
DD
Min
I
OH
=-100
μ
A, V
DD
=V
DD
Min
V
DD
-0.2
0.2
V
V
Table 5:
DC Characteristics (Cmos Compatible)
Recommended System Power-up Timing
Parameter
T
PU-READ
*
T
PU-WRITE
*
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Description
Min
Unit
Power-up to Read Operation
100
μ
s
Power-up to Program/Erase Operation
100
μ
s
Table 6:
Recommended System Power-up Timing
Capacitance (Ta = 25
°
C, f = 1Mhz, other pins open)
Parameter
C
I/O
*
C
IN
*
Description
Test Conditons
Max
I/O Pin Capacitance
V
I/O
=0V
12pF
Input Capacitance
V
IN
=0V
6pF
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 7:
Capacitance (Ta = 25
°
C, f = 1Mhz, Other Pins Open)
Reliability Characteristics
Symbol
N
END
*
T
DR
*
I
LTH
*
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Parameter
Min Specification
Unit
Test Method
Endurance
10,000
Cycles
JEDEC Standard A117
Data Retention
10
Years
JEDEC Standard A103
Latch Up
100+I
DD
mA
JEDEC Standard 78
Table 8:
Reliability Characteristics
This specification is subject to change without further notice. (07.22.2004 V1.0)
Page 9 of 21
相關(guān)PDF資料
PDF描述
EM39LV040-55FLC 4M (512Kx8) Bits Flash Memory
EM39LV040-55FLI 4M (512Kx8) Bits Flash Memory
EM39LV040-55FMI 4M (512Kx8) Bits Flash Memory
EM39LV040-70FDI 4M (512Kx8) Bits Flash Memory
EM39LV040-70FLC 4M (512Kx8) Bits Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EM39LV040-55FDC 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory
EM39LV040-55FDI 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory
EM39LV040-55FHC 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory
EM39LV040-55FHI 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory
EM39LV040-55FLC 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory