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參數(shù)資料
| 型號(hào)： | EM39LV040-55FLC |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | 4M (512Kx8) Bits Flash Memory |
| 中文描述： | 4分（512Kx8）位快閃記憶體 |
| 文件頁數(shù)： | 1/21頁 |
| 文件大小： | 275K |
| 代理商： | EM39LV040-55FLC |
EM39LV040
4M (512Kx8) Bits Flash Memory
SPECIFICATION
General Description
The EM39LV040 is a 4M bits Flash memory organized as 512K x 8 bits. The EM39LV040
uses a single 3.0 volt-only power supply for both Read and Write functions. Featuring high
performance Flash memory technology, the EM39LV040 provides a typical Byte-Program
time of 11 μsec and a typical Sector-Erase time of 40 ms. The device uses Toggle Bit or
Data# Polling to detect the completion of the Program or Erase operation. To protect against
inadvertent write, the device has on-chip hardware and software data protection schemes.
The device offers typical 100,000 cycles endurance and a greater than 10 years data retention.
The EM39LV040 conforms to JEDEC standard pin outs for x8 memories. It is offered in
package types of 32-lead PLCC, 32-pin TSOP, and known good die (KGD). For KGD, please
contact ELAN Microelectronics or its representatives for detailed information (see Appendix at
the bottom of this specification for Ordering Information).
The EM39LV040 devices are developed for applications that require memories with
convenient and economical updating of program, data or configurations, e.g., Networking
cards, CD-RW, Scanner, Digital TV, Electronic Books, GPS, Router/Switcher, etc.
Features
Single Power Supply
Full voltage range from 2.7 to 3.6 volts
for both read and write operations
Regulated voltage range: 3.0 to 3.6 volts
for both read and write operations
Sector-Erase Capability
Uniform 4Kbyte sectors
Sector-Erase Capability
Uniform 64Kbyte sectors
Read Access Time
Access time
:
45, 55, 70 and 90 ns
Power Consumption
Active current
:
5 mA (Typical)
Standby current
:
1
μ
A (Typical)
Erase/Program Features
Sector-Erase Time
:
40 ms (Typical)
Chip-Erase Time
:
40 ms (Typical)
Byte-Program Time
:
11
μ
s (Typical)
Chip Rewrite Time
:
6 seconds (Typical)
End-of-Program or End-of-Erase
Detection
Data# Polling
Toggle Bit
CMOS I/O Compatibility
JEDEC Standard
Pin-out and software command sets
compatible with single-power supply
|Flash memory
High Reliability
Endurance cycles: 100K (Typical)
Data retention: 10 years
Package Option
32-pin PLCC
32-pin TSOP
This specification is subject to change without further notice. (07.22.2004 V1.0)
Page 1 of 21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EM39LV040-55FLI | 4M (512Kx8) Bits Flash Memory |
| EM39LV040-55FMI | 4M (512Kx8) Bits Flash Memory |
| EM39LV040-70FDI | 4M (512Kx8) Bits Flash Memory |
| EM39LV040-70FLC | 4M (512Kx8) Bits Flash Memory |
| EM39LV040-70FLI | 4M (512Kx8) Bits Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EM39LV040-55FLI | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
| EM39LV040-55FMC | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
| EM39LV040-55FMI | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
| EM39LV040-70FDC | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
| EM39LV040-70FDI | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
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