Absolute Maximum Ratings (TA = +25°C)
參數(shù)資料
型號(hào): EL5130IS
廠商: Intersil
文件頁(yè)數(shù): 5/12頁(yè)
文件大小: 0K
描述: IC OP AMP LN 500MHZ 8-SOIC
標(biāo)準(zhǔn)包裝: 97
放大器類型: 電壓反饋
電路數(shù): 1
轉(zhuǎn)換速率: 350 V/µs
增益帶寬積: 1.5GHz
-3db帶寬: 300MHz
電流 - 輸入偏壓: 2.27µA
電壓 - 輸入偏移: 200µV
電流 - 電源: 3.54mA
電流 - 輸出 / 通道: 100mA
電壓 - 電源,單路/雙路(±): 5 V ~ 12 V,±2.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 管件
2
FN7381.5
May 28, 2010
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Slewrate between VS+ and VS-. . . . . . . . . . . . . . . . . . . . . . . . 1V/s
Supply Voltage from VS+ to VS- . . . . . . . . . . . . . . . . . . . . . . . 13.2V
IIN-, IIN+, CE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mA
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +125°C
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 500Ω, RG = 50Ω, CL = 5pF, TA = +25°C, Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
VOS
Offset Voltage
-0.9
0.2
0.9
mV
TCVOS
Offset Voltage Temperature Coefficient
Measured from TMIN to TMAX
0.8
V/°C
IB
Input Bias Current
VIN = 0V
1.5
2.27
3.3
A
IOS
Input Offset Current
VIN = 0V
-500
100
500
nA
TCIOS
Input Bias Current Temperature
Coefficient
Measured from TMIN to TMAX
-3
nA/°C
PSRR
Power Supply Rejection Ratio
VS = ±4.75V to ±5.25V
75
90
dB
CMRR
Common Mode Rejection Ratio
VIN = ±3.0V
95
110
dB
CMIR
Common Mode Input Range
Guaranteed by CMRR test
±3
±3.3
V
RIN
Input Resistance
Common mode
5
20
M
Ω
CIN
Input Capacitance
1pF
IS
Supply Current
3.0
3.54
4.1
mA
AVOL
Open Loop Gain
VOUT = ±2.5V, RL = 1kΩ to GND
10
16
kV/V
VO
Output Voltage Swing
RL = 1kΩ, RF = 900Ω, RG = 100Ω
±3.5
±3.8
V
RL = 150Ω
±3.5
±3.3
V
ISC
Short Circuit Current
RL = 10Ω
50
100
mA
BW
-3dB Bandwidth
AV = +5, RL = 500Ω
300
MHz
BW
±0.1dB Bandwidth
AV = +5, RL = 500Ω
60
MHz
GBWP
Gain Bandwidth Product
1500
MHz
PM
Phase Margin
RL = 1kΩ, CL = 6pF
55
°
SR
Slew Rate
VS = ±5V, RL = 150Ω, VOUT = ±2.5V
225
350
V/s
tR, tF
Rise Time, Fall Time
±0.1VSTEP
TBD
ns
tPD
Propagation Delay
±0.1VSTEP
TBD
ns
tS
0.01% Settling Time
14
ns
dG
Differential Gain
AV = +2, RF = 1kΩ
0.01
%
dP
Differential Phase
AV = +2, RF = 1kΩ
0.01
°
eN
Input Noise Voltage
f = 10kHz
1.8
nV/
√Hz
iN
Input Noise Current
f = 10kHz
1.1
pA/
√Hz
EL5130, EL5131
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