參數(shù)資料
型號(hào): EL5130IS
廠商: Intersil
文件頁數(shù): 2/12頁
文件大?。?/td> 0K
描述: IC OP AMP LN 500MHZ 8-SOIC
標(biāo)準(zhǔn)包裝: 97
放大器類型: 電壓反饋
電路數(shù): 1
轉(zhuǎn)換速率: 350 V/µs
增益帶寬積: 1.5GHz
-3db帶寬: 300MHz
電流 - 輸入偏壓: 2.27µA
電壓 - 輸入偏移: 200µV
電流 - 電源: 3.54mA
電流 - 輸出 / 通道: 100mA
電壓 - 電源,單路/雙路(±): 5 V ~ 12 V,±2.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 管件
10
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN7381.5
May 28, 2010
FIGURE 42. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 43. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Typical Performance Curves
909mW
θ
JA =
11
0°C
/W
SO
8
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
435mW
θ
JA=230
°C/W
SOT2
3-5
0
25
125
150
1.4
0
AMBIENT TEMPERATURE (°C)
P
O
WER
DIS
S
IPATION
(W)
50
0.8
1.2
0.4
75
100
85
0.6
1
0.2
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0
25
125
150
1
0
AMBIENT TEMPERATURE (°C)
P
O
WER
DIS
S
IPATION
(W)
50
0.5
0.9
0.2
75
100
85
0.3
0.7
0.1
0.4
0.8
0.6
625mW
391mW
θ
JA=2
56°C
/W
SOT
23-5
θ
JA =
16
0°C
/W
SO
8
EL5130, EL5131
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