參數(shù)資料
型號: EDS2516AFTA
廠商: Elpida Memory, Inc.
英文描述: 256M bits SDRAM
中文描述: 256M比特內(nèi)存
文件頁數(shù): 1/50頁
文件大?。?/td> 603K
代理商: EDS2516AFTA
Document No. E0984E20 (Ver. 2.0)
Date Published May 2007 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2006-2007
DATA SHEET
256M bits SDRAM
EDS2516AFTA (16M words
×
16 bits)
Specifications
Density: 256M bits
Organization
4M words
×
16 bits
×
4 banks
Package: 54-pin plastic TSOP (II)
Lead-free (RoHS compliant)
Power supply: VDD, VDDQ
=
3.3V
±
0.3V
Clock frequency: 166MHz/133MHz (max.)
Four internal banks for concurrent operation
Interface: LVTTL
Burst lengths (BL): 1, 2, 4, 8, full page
Burst type (BT):
Sequential (1, 2, 4, 8, full page)
Interleave (1, 2, 4, 8)
/CAS Latency (CL): 2, 3
Precharge: auto precharge option for each burst
access
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period: 7.8
μ
s
Operating ambient temperature range
TA = 0
°
C to +70
°
C
Features
Single pulsed /RAS
Burst read/write operation and burst read/single write
operation capability
Byte control by UDQM and LDQM
Pin Configurations
/xxx indicates active low signal.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
UDQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
/WE
/CAS
/RAS
/CS
BA0
BA1
A10
A0
A1
A2
A3
VDD
54-pin Plastic TSOP (II)
(Top view)
Address input
Bank select address
Data-input/output
Chip select
Row address strobe
Column address strobe
Write enable
Input/output mask
Clock enable
Clock input
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
A0 to A12
BA0, BA1
DQ0 to DQ15
/CS
/RAS
/CAS
/WE
UDQM,LDQM
CKE
CLK
VDD
VSS
VDDQ
VSSQ
NC
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