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參數(shù)資料
| 型號： | EDI8F82046C |
| 英文描述： | 2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout(2Mx8 CMOS靜態(tài)RAM模塊) |
| 中文描述： | 2兆位× 8靜態(tài)RAM的CMOS模塊革命管腳（2Mx8的CMOS靜態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 106K |
| 代理商： | EDI8F82046C |
EDI8F82046C
2 Megx8 SRAM Module
1
EDI8F82046C Rev. 4.0 4/96 ECO#7470
2 Megabits x 8 Static RAM
CMOS, Module with Revolutionary Pinout
The EDI8F82046C is a 16 Megabit CMOS Static RAM
based on four 512Kx8 Static RAMs mounted on a multi-
layered epoxy laminate (FR4) substrate.
The EDI8F82046C is packaged in a 36 pin DIP and features
the JEDEC approved, revolutionary pinout.
All inputs and outputs are TTL compatible and operate from
a single 5V supply.
Fully asynchronous, the EDI8F82046C requires no clocks
or refreshing for operation.1Megx8 Static RAM
CMOS, Module
2 Meg x 8 bit CMOS Static
Random Access Memory
Access Times 20 thru 35ns
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
High Density Packaging
JEDEC Approved, Revolutionary Pinout
36 Pin DIP, No. 178
Single +5V (
±10%) Supply Operation
Pin Names
A-A20
Address Inputs
E
Chip Enable
W
Write Enable
G
Output Enable
DQ-DQ7
Common Data Input/Output
VCC
Power (+5V
±10%)
VSS
Ground
NC
No Connection
A
A1
A2
A3
A4
E
DQ
DQ1
VCC
VSS
DQ2
DQ3
W
A5
A6
A7
A8
A9
A20
A19
A18
A17
A16
G
DQ7
DQ6
VSS
VCC
DQ5
DQ4
A15
A14
A13
A12
A11
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
Pin Configurations and Block Diagram
Features
Electronic Designs Incorporated
One Research Drive Westborough, MA 01581USA 508-366-5151 FAX 508-836-4850
Electronic Designs Europe Ltd. Shelley House, The Avenue Lightwater, Surrey GU18 5RF
United Kingdom 01276 472637 FAX: 01276 473748
A-A18
W
G
A19-A20
E
DEC
DQ-DQ7
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| EDI8L32128C20AI | 制造商:Microsemi Corporation 功能描述:EDI8L32128C20AI - Bulk |
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