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參數(shù)資料
| 型號： | EDI8F81025C |
| 英文描述： | 1Megx8 Static RAM CMOS, Module(1Mx8 CMOS靜態(tài)RAM模塊) |
| 中文描述： | 1Megx8靜態(tài)RAM的CMOS模塊（1Mx8的CMOS靜態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 101K |
| 代理商： | EDI8F81025C |
EDI8F81025C
1Megx8 SRAM Module
1
EDI8F81025C Rev. 5.0 6/96 ECO#7549
1Megx8 Static RAM
CMOS, Module
The EDI8F81025C is an 8 megabit CMOS Static RAM
based on two 512Kx8 Static RAMs mounted on a multi-
layered epoxy laminate (FR4) substrate.
A low power version with data retention (EDI8F81025LP) is
also available.
All inputs and outputs are TTL compatible and operate from
a single 5V supply.
Fully asynchronous, the EDI8F81025C requires no clocks
or refreshing for operation.
Features
1 Meg x 8 bit CMOS Static
Random Access Memory
Access Times 70 thru 100ns
Data Retention Function (EDI8F81025LP )
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
High Density Packaging
36 Pin DIP, No. 180
Single +5V (
±10%) Supply Operation
Pin Configurations and Block Diagram
VCC
NC
A15
A17
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
NC
A19
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A
DQ
DQ1
DQ2
VSS
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
Pin NamesPin Names
A-A19
Address Inputs
E
Chip Enable
W
Write Enable
G
Output Enable
DQ-DQ7
Common Data Input/Output
VCC
Power (+5V
±10%)
VSS
Ground
NC
No Connection
A-A18
W
G
A19
E
DECODER
DQ-DQ7
Electronic Designs Incorporated
One Research Drive Westborough, MA 01581USA 508-366-5151 FAX 508-836-4850
Electronic Designs Europe Ltd. Shelley House, The Avenue Lightwater, Surrey GU18 5RF
United Kingdom 01276 472637 FAX: 01276 473748
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| EDI8L32128C20AI | 制造商:Microsemi Corporation 功能描述:EDI8L32128C20AI - Bulk |
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