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參數(shù)資料
| 型號： | EDI488MEV6SI |
| 廠商： | ELECTRONIC DESIGNS INC |
| 元件分類： | DRAM |
| 英文描述： | 8M X 8 EDO DRAM, 60 ns, PDSO32 |
| 封裝： | PLASTIC, TSOP2-32 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 442K |
| 代理商： | EDI488MEV6SI |
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
EDI488MEV-RP
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on any pin relative to Vss
-0.5 to +4.6
V
Voltage on Vcc supply relative to Vss
-0.5 to +4.6
V
Industrial Temperature
-40 to +85
°C
Military Temperature
-55 to +125
°C
Storage Temperature
-65 to +125
°C
Power Dissipation
0.55
W
Short Circuit Output Current
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltages referenced to Vss, TA = 0
°C to +70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
3.0
3.3
3.6
V
Ground
VSS
00
0
V
Input High Voltage
VIH
2.4
—
V
Input Low Voltage
VIL
-0.3(2)
—
+0.8
V
NOTES:
1. 6.5V at pulse width
≤ 15ns which is measured at Vcc.
2. -1.3V at pulse width
≤ 15ns which is measured at Vss.
Parameter
Symbol
Condition
Max Unit
Input Capacitance
CA
VIN = Vcc or Vss, f = 1.0MHz
5pF
(Address)
Input Capacitance
CI
VIN = Vcc or Vss, f = 1.0MHz
7pF
Output Capacitance
CI/O
VIN = Vcc or Vss, f = 1.0MHz
7pF
(I/O0)
CAPACITANCE
(TA = +25
°C)
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. Functional operation of the device should be
restricted to the conditions as indicated in the operational sections of this specifi-
cation. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Parameter
Symbol
Conditions
Units
Min
Max
Min
Max
Operating Current
ICC1*
RAS + CAS cycling @ tRC = min
140
120
mA
Standby Current
ICC2
RAS = CAS = WE = VIH
2
mA
RAS-Only Refresh Current
ICC3*
CAS = VIH, RAS cycling @ tRC = min
140
120
mA
Hyper Page Mode Current
ICC4*
RAS = VIL, CAS, Address cycling @ tPC = min
130
110
mA
Standby Current
ICC5
RAS = CAS = WE = VCC -0.2V
1
mA
CAS-Before-RAS Refresh Current
ICC6*
RAS and CAS cycling @ tRC = min
140
120
mA
Input Leakage Current
IIL
Any input 0 < VIN < VCC +0.3V
-5
+5
-5
+5
A
all other pins not under test = 0 Volts
Output Leakage Current
IOL
Data out is disabled, 0V < VOUT < VCC
-5
+5
-5
+5
A
Output High Voltage Level
VOH
IOH=-2mA
2.4
V
Output Low Voltage Level
VOL
IOL = 2mA
0.4
V
* NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an
average current. In ICC1, ICC3, and ICC6, address can be changed maximum once while RAS = VIL. In ICC4, address can be changed maximum once within
one fast page mode cycle time, tPC.
DC CHARACTERISTICS
(VCC = 5V, TA = -55
°C to +125°C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| EDI488MEV6SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| EDI488MEV7SI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| EDI488MEV7SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| EDI4F3232F6M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Page Mode DRAM Module |
| EDI4F3232F7M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Page Mode DRAM Module |
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