參數資料
型號: EDD5104ADTA-E
廠商: Elpida Memory, Inc.
英文描述: 512M bits DDR SDRAM
中文描述: 512M比特DDR內存
文件頁數: 5/49頁
文件大?。?/td> 568K
代理商: EDD5104ADTA-E
EDD5104ADTA-E, EDD5108ADTA-E, EDD5116ADTA-E
Preliminary Data Sheet E0501E10 (Ver. 1.0)
5
DC Characteristics 1 (TA = 0 to +70
°
C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
max.
Parameter
Symbol
Grade
×
4
×
8
×
16
Unit
Test condition
Notes
Operating current (ACT-
PRE)
IDD0
-6B
-7A, -7B
150
135
150
135
150
135
mA
CKE
VIH,
tRC = tRC (min.)
CKE
VIH, BL = 4,
CL = 2.5,
tRC = tRC (min.)
1, 2, 9
Operating current
(ACT-READ-PRE)
IDD1
-6B
-7A, -7B
190
170
200
175
210
180
mA
1, 2, 5
Idle power down standby
current
Floating idle standby
current
IDD2P
3
3
3
mA
CKE
VIL
4
IDD2F
-6B
-7A, -7B
30
25
30
25
30
25
mA
CKE
VIH, /CS
VIH,
DQ, DQS, DM = VREF
CKE
VIH, /CS
VIH,
DQ, DQS, DM = VREF
4, 5
Quiet idle standby current IDD2Q
20
20
20
mA
4, 10
Active power down
standby current
IDD3P
20
20
20
mA
CKE
VIL
3
Active standby current
IDD3N
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
65
55
230
200
230
200
320
300
65
55
250
210
250
210
320
300
65
55
270
230
270
230
320
300
mA
CKE
VIH, /CS
VIH
tRAS = tRAS (max.)
CKE
VIH, BL = 2,
CL = 2.5
CKE
VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input
VIL or
VIH
Input
VDD – 0.2 V
Input
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto Refresh current
IDD5
mA
Self refresh current
IDD6
4
4
4
mA
Self refresh current
((L-version))
Operating current
(4 banks interleaving)
Notes: 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at
VIH or
VIL.
IDD6
-xxL
3
3
3
mA
IDD7A
-6B
-7A, -7B
490
410
510
430
530
450
mA
BL = 4
1, 5, 6, 7
DC Characteristics 2 (TA = 0 to +70
°
C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–2
2
μA
VDD
VIN
VSS
Output leakage current
ILO
–5
5
μA
VDDQ
VOUT
VSS
Output high current
IOH
–15.2
mA
VOUT = 1.95V
Output low current
IOL
15.2
mA
VOUT = 0.35V
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