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參數(shù)資料
| 型號： | ECP100G |
| 英文描述： | 1 Watt, High Gain HBT Amplifier |
| 中文描述： | 1瓦特，高增益異質結雙極晶體管放大器 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 795K |
| 代理商： | ECP100G |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 9 June 2005
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
Product Features
400 – 2300 MHz
+31.5 dBm P1dB
+46 dBm Output IP3
18 dB Gain @ 900 MHz
Single Positive Supply (+5 V)
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Defense / Homeland Security
Product Description
The AH215 / ECP100 is a high dynamic range driver
amplifier in a low-cost surface mount package.
The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB
power. The part is housed in a lead-free/green/RoHS-
compliant SOIC-8 package. All devices are 100% RF and
DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 / ECP100 to maintain
high linearity over temperature and operate directly off a
+5 V supply.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Backside Paddle
N/C or GND
2, 4, 5
Specifications (1)
Parameters
Units Min
Typ Max
Operational Bandwidth
MHz
400
2300
Test Frequency
MHz
2140
Gain
dB
10
11
Input Return Loss
dB
18
Output Return Loss
dB
8
Output P1dB
dBm
+29
+31.5
Output IP3 (2)
dBm
+43.8
+45
Noise Figure
dB
6.3
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
dBm
+25.5
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
dBm
+23
Operating Current Range , Icc (3)
mA
400
450
500
Device Voltage, Vcc
V
5
1. Test conditions unless otherwise noted: 25C, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51
. (ie. total device current
typically will be 461 mA.)
Typical Performance (4)
Parameters
Units
Typical
Frequency
MHz
900
1960
2140
S21 – Gain
dB
18
12
11
S11
dB
-13
-11
-18
S22
dB
-7
-10
-8
Output P1dB
dBm
+31
+32
+31.5
Output IP3
dBm
+46
+45
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+25.5
W-CDMA Channel Power
@ -45 dBc ACPR
dBm
+23
Noise Figure
dB
7.0
5.5
6.2
Supply Bias
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25
° C.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-65 to +150
°C
RF Input Power (continuous)
+26 dBm
Device Voltage
+8 V
Device Current
900 mA
Device Power
5 W
Junction Temperature
+250
°C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AH215-S8*
1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
ECP100G*
1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
AH215-S8G
1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH215-S8PCB900
900 MHz Evaluation Board
AH215-S8PCB1960
1960 MHz Evaluation Board
AH215-S8PCB2140
2140 MHz Evaluation Board
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
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