參數(shù)資料
型號: ECP050D-PCB1960
英文描述: 1/2 Watt, High Linearity InGaP HBT Amplifier
中文描述: 1 / 2瓦特,高線性InGaP HBT功率放大器
文件頁數(shù): 1/5頁
文件大?。?/td> 483K
代理商: ECP050D-PCB1960
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 5
April 2006
ECP050D
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge TM
Product Features
x 1800 – 2300 MHz
x +28.5 dBm P1dB
x +44 dBm Output IP3
x 14 dB Gain @ 1960 MHz
x +5V Single Positive Supply
x 16-pin 4x4mm lead-free/green/
RoHS-compliant QFN Package
Applications
x Final stage amplifiers for Repeaters
x Mobile Infrastructure
Product Description
The ECP050D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +44
dBm OIP3 and +28.5 dBm of compressed 1dB power. It
is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC tested.
The ECP050D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP050D to maintain high linearity over temperature and
operate directly off a single +5V supply.
This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Function
Pin No.
Vref
1
RF Input
3
RF Output
10, 11
Vbias
16
GND
Backside Paddle
N/C or GND
2, 4-9, 12-15
Specifications (1)
Parameters
Units Min
Typ
Max
Operational Bandwidth
MHz
1800
2300
Test Frequency
MHz
2140
Gain
dB
12.5
14.4
Input Return Loss
dB
23
Output Return Loss
dB
8
Output P1dB
dBm
+26.5
+28.5
Output IP3 (2)
dBm
+41
+42
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
dBm
+22.5
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
dBm
+20
Noise Figure
dB
5.3
Operating Current Range (3)
mA
200
250
300
Device Voltage
V
+5
1. Test conditions unless otherwise noted. 25 C, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
qC
Storage Temperature
-65 to +150
qC
RF Input Power (continuous)
+22 dBm
Device Voltage
+8 V
Device Current
400 mA
Device Power
2 W
Junction Temperature
+250
qC
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameters
Units
Typical
Frequency
MHz
1960
2140
Gain
dB
14.3
14.4
S11
dB
-12
-23
S22
dB
-8
Output P1dB
dBm
+28.3
+28.5
Output IP3 (2)
dBm
+44
+42
IS-95A Channel Power
@ -45 dBc ACPR,
dBm
+22.5
wCDMA Channel Power
@ -45 dBc ACLR
dBm
+20
Noise Figure
dB
5
5.3
Supply Bias
+5 V @ 250 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
Ordering Information
Part No.
Description
ECP050D-G
Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
ECP050D-PCB1960
1960 MHz Evaluation Board
ECP050D-PCB2140
2140 MHz Evaluation Board
1
2
3
4
12
11
10
9
16
15
14
13
5
6
7
8
N/C
RF OUT
N/C
Vref
N/C
RF IN
N/C
Vb
ia
s
N/
C
N/
C
N/
C
N/
C
N/
C
N/
C
N/
C
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