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參數(shù)資料
| 型號： | EC3H01B |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | VHF Band Low-Noise Amplifer and OSC Applications |
| 中文描述： | 甚高頻波段低噪聲放大器和OSC應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 26K |
| 代理商： | EC3H01B |
EC3H01B
No.6573-1/5
0.35
0.2
0
0.15
0.05
0.15
0.6
0
0
0
0
0
1
0
0.5
0.05
(Bottom View)
3
1
2
1 : Base
2 : Emitter
3 : Collector
SANYO : E-CSP1006-3
VHF Band Low-Noise Amplifer
and OSC Applications
Features
Low noise : NF=1.8dB typ (f=150MHz).
High gain :
S21e
2
=16dB typ (f=150MHz).
Ultraminiature (1006 size) and thin (0.5mm) leadless
package.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
20
12
2
50
100
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE1
hFE2
fT1
fT2
Cre
S21e
2
NF
VCB=10V, IE=0
VEB=1V, IC=0
VCE=2V, IC=3mA
VCE=2V, IC=50mA
VCE=2V, IC=3mA
VCE=2V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=2V, IC=3mA, f=150MHz
VCE=2V, IC=3mA, f=150MHz
1.0
10
180
μ
A
μ
A
DC Current Gain
100
70
1.0
Gain Bandwidth Product
1.7
5.0
1.1
0.8
16
1.8
GHz
GHz
pF
pF
dB
dB
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
1.8
13
3.0
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6573
EC3H01B
Package Dimensions
unit : mm
2183
[EC3H01B]
72100 TS IM TA-2481
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EC3H02B | VHF to UHF Low-Noise Wide-Band Amplifier Applications |
| EC3H02C | VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| EC3H03B | VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications |
| EC3H04B | High-Frequency Low-Noise Amplifier and OSC Applications |
| EC3H04C | High-Frequency Low-Noise Amplifier and OSC Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EC3H02B | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Low-Noise Wide-Band Amplifier Applications |
| EC3H02BA | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| EC3H02BA_09 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| EC3H02BA-TL-H | 功能描述:TRANS NPN 10V 70A ECSP1006-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| EC3H02C | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications |
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