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參數(shù)資料
| 型號(hào)： | EC3H02C |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| 中文描述： | 甚高頻到超高頻寬帶低噪聲放大器的應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 26K |
| 代理商： | EC3H02C |
EC3H02C
No.6579-1/5
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Features
Low noise : NF=1.0dB typ (f=1GHz).
High gain :
S21e
2
=12dB typ (f=1GHz).
High cutoff frequency : fT=7GHz typ.
Ultraminiature (1008 size) and thin (0.6mm)
leadless package .
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
20
10
2
70
100
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwitch Product
Output Capacitance
Reverse Transfer Capacitance
ICBO
IEBO
hFE
fT
Cob
Cre
S21e
2
1
S21e
2
2
NF
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=2V, IC=3mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
1.0
10
180
μ
A
μ
A
100
5
7
GHz
pF
pF
dB
dB
dB
0.7
0.45
12
8.5
1.0
1.2
Forward Transfer Gain
9
Noise Figure
1.8
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6579
EC3H02C
Package Dimensions
unit : mm
2184
[EC3H02C]
71400 TS IM TA-2739
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
2
1
3
4
0.5
0.2
0.2
0
0
0
0.05
0
0
0.05
0.8
1
0
(Bottom View)
1 : Base
2 : Emitter
3 : Collector
4 : Collector
SANYO : E-CSP1008-4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EC3H03B | VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications |
| EC3H04B | High-Frequency Low-Noise Amplifier and OSC Applications |
| EC3H04C | High-Frequency Low-Noise Amplifier and OSC Applications |
| EC3H05B | VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| EC3H06B | UHF to S Band Low-Noise Amplifier and OSC Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EC3H03B | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications |
| EC3H03BA | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications |
| EC3H04B | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier and OSC Applications |
| EC3H04C | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier and OSC Applications |
| EC3H05B | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications |
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