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參數(shù)資料
| 型號(hào)： | EBE51UD8AEFA-6E-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Circular Connector; No. of Contacts:26; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | 64M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 223K |
| 代理商： | EBE51UD8AEFA-6E-E |
EBE51UD8AEFA
Data Sheet E0584E30 (Ver. 3.0)
14
ODT DC Electrical Characteristics (TC = 0°C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
typ.
max.
Unit
Note
Rtt effective impedance value for EMRS (A6, A2)
=
0, 1
;
75
Rtt1(eff)
60
75
90
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 0
;
150
Rtt2(eff)
120
150
180
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 1
;
50
Rtt3(eff)
40
50
60
1
Deviation of VM with respect to VDDQ/2
VM
6
+
6
%
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt(eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL
_
18.
VIH(AC)
VIL(AC)
I(VIH(AC))
I(VIL(AC))
Rtt(eff) =
Measurement Definition for
VM
Measure voltage (VM) at test pin (midpoint) with no load.
2
×
VM
VDDQ
VM =
×
100%
1
OCD Default Characteristics (TC = 0°C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
(DDR2 SDRAM Component Specification)
Parameter
min.
typ.
max.
Unit
Notes
Output impedance
12.6
18
23.4
1
Pull-up and pull-down mismatch
0
4
1, 2
Output slew rate
1.5
5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT
VDDQ)/IOH must be less than 23.4
for values of VOUT between VDDQ and VDDQ
280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4
for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
Pin Capacitance (TA = 25°C, VDD = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
Pins
Address, /RAS, /CAS,
/WE, /CS, CKE, ODT
min.
max.
Unit
Note
Input capacitance
CI1
1.0
2.0
pF
Input capacitance
CI2
CK, /CK
1.0
2.0
pF
Data and DQS input/output
capacitance
CO
DQ, DQS, /DQS, DM
2.5
4.0
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EBE51UD8AGFA-4A-E | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGFA-5C-E | RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 15V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% |
| EBE51UD8AGFA | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8ABFA | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8ABFA-4A-E | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBE51UD8AGFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGFA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGWA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM |
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