參數(shù)資料
型號(hào): EBE51UD8AEFA-6
廠商: Elpida Memory, Inc.
元件分類: 圓形連接器
英文描述: Circular Connector; No. of Contacts:23; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-99 RoHS Compliant: No
中文描述: 512MB的無(wú)緩沖DDR2 SDRAM DIMM內(nèi)存(6400字?64位,1個(gè)等級(jí))
文件頁(yè)數(shù): 16/22頁(yè)
文件大?。?/td> 223K
代理商: EBE51UD8AEFA-6
EBE51UD8AEFA
Data Sheet E0584E30 (Ver. 3.0)
16
-5C
-4A
Frequency (Mbps)
533
400
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
Active bank A to active bank B command
period
tRRD
7.5
7.5
ns
Write recovery time
tWR
15
15
ns
Auto precharge write recovery + precharge
time
tDAL
(tWR/tCK)+
(tRP/tCK)
(tWR/tCK)+
(tRP/tCK)
tCK
1
Internal write to read command delay
tWTR
7.5
10
ns
Internal read to precharge command delay
tRTP
7.5
7.5
ns
Exit self refresh to a non-read command
tXSNR
tRFC + 10
tRFC + 10
ns
Exit self refresh to a read command
tXSRD
200
200
tCK
Exit precharge power down to any non-read
command
tXP
2
2
tCK
Exit active power down to read command
tXARD
2
2
tCK
3
Exit active power down to read command
(slow exit/low power mode)
CKE minimum pulse width (high and low
pulse width)
tXARDS
6
AL
6
AL
tCK
2, 3
tCKE
3
3
tCK
Output impedance test driver delay
tOIT
0
12
0
12
ns
Auto refresh to active/auto refresh command
time
Average periodic refresh interval
(0
°
C
TC
+85
°
C)
(+85
°
C
<
TC
+95
°
C)
Minimum time clocks remains ON after CKE
asynchronously drops low
Notes: 1. For each of the terms above, if not already an integer, round to the next higher integer.
2. AL: Additive Latency.
3. MRS A12 bit defines which active power down exit timing to be applied.
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(DC) level for a rising signal and VIL(DC) for a falling signal applied to the device under test.
tRFC
105
105
ns
tREFI
7.8
7.8
μ
s
tREFI
tIS + tCK +
tIH
3.9
tIS + tCK +
tIH
3.9
μ
s
tDELAY
ns
DQS
/DQS
tDS
tDH
tDS
tDH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
CK
/CK
tIS
tIH
tIS
tIH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
Input Waveform Timing 1 (tDS, tDH)
Input Waveform Timing 2 (tIS, tIH)
相關(guān)PDF資料
PDF描述
EBE51UD8AEFA-6E-E Circular Connector; No. of Contacts:26; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
EBE51UD8AGFA-4A-E 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
EBE51UD8AGFA-5C-E RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 15V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80%
EBE51UD8AGFA 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
EBE51UD8ABFA 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EBE51UD8AEFA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words ?64 bits, 1 Rank)
EBE51UD8AGFA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
EBE51UD8AGFA-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
EBE51UD8AGFA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
EBE51UD8AGFA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)