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參數(shù)資料
| 型號： | EBE51UD8AEFA-6 |
| 廠商： | Elpida Memory, Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:23; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-99 RoHS Compliant: No |
| 中文描述： | 512MB的無緩沖DDR2 SDRAM DIMM內(nèi)存（6400字？64位，1個等級） |
| 文件頁數(shù)： | 13/22頁 |
| 文件大小： | 223K |
| 代理商： | EBE51UD8AEFA-6 |
EBE51UD8AEFA
Data Sheet E0584E30 (Ver. 3.0)
13
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
Value
Unit
Notes
Input leakage current
ILI
2
μ
A
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
5
μ
A
VDDQ
≥
VOUT
≥
VSS
Minimum required output pull-up under AC
test load
Maximum required output pull-down under
AC test load
VOH
VTT + 0.603
V
5
VOL
VTT – 0.603
V
5
Output timing measurement reference level VOTR
0.5
×
VDDQ
V
1
Output minimum sink DC current
IOL
+13.4
mA
3, 4, 5
Output minimum source DC current
IOH
–13.4
mA
2, 4, 5
Notes: 1. The VDDQ of the device under test is referenced.
2. VDDQ = 1.7V; VOUT = 1.42V.
3. VDDQ = 1.7V; VOUT = 0.28V.
4. The DC value of VREF applied to the receiving device is expected to be set to VTT.
5. After OCD calibration to 18
at TA = 25
°
C, VDD = VDDQ = 1.8V.
DC Characteristics 3 (TC = 0°C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
max.
Unit
Notes
AC differential input voltage
VID (AC)
0.5
VDDQ
+
0.6
V
1
AC differential cross point voltage
VIX (AC)
0.5
×
VDDQ
0.175
0.5
×
VDDQ
+
0.175
V
2
AC differential cross point voltage
VOX (AC)
0.5
×
VDDQ
0.125
0.5
×
VDDQ
+
0.125
V
3
Notes: 1. VID(AC) specifies the input differential voltage |VTR -VCP| required for switching, where VTR is the true
input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as
/CK, /DQS, /LDQS or /UDQS). The minimum value is equal to VIH(AC)
VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5
×
VDDQ of the transmitting device and VIX(AC)
is expected to track variations in VDDQ . VIX(AC) indicates the voltage at which differential input signals
must cross.
3. The typical value of VOX(AC) is expected to be about 0.5
×
VDDQ of the transmitting device and
VOX(AC) is expected to track variations in VDDQ . VOX(AC) indicates the voltage at which differential
output signals must cross.
Crossing point
VSSQ
VTR
VCP
VID
VIX or VOX
VDDQ
Differential Signal Levels*
1, 2
相關PDF資料 |
PDF描述 |
|---|---|
| EBE51UD8AEFA-6E-E | Circular Connector; No. of Contacts:26; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| EBE51UD8AGFA-4A-E | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGFA-5C-E | RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 15V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% |
| EBE51UD8AGFA | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8ABFA | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EBE51UD8AEFA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words ?64 bits, 1 Rank) |
| EBE51UD8AGFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EBE51UD8AGFA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
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