參數(shù)資料
型號: EBE51ED8AEFA-4A-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: LJT 5C 5#16 SKT RECP
中文描述: 64M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁數(shù): 6/22頁
文件大小: 186K
代理商: EBE51ED8AEFA-4A-E
EBE51ED8AEFA
Data Sheet E0585E20 (Ver. 2.0)
6
Byte No.
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Comments
27
Minimum row precharge time (tRP)
Minimum row active to row active
delay (tRRD)
Minimum /RAS to /CAS delay (tRCD)
Minimum active to precharge time
(tRAS)
-5C
-4A
0
0
1
1
1
1
0
0
3CH
15ns
28
0
0
0
1
1
1
1
0
1EH
7.5ns
29
0
0
1
1
1
1
0
0
3CH
15ns
30
0
0
1
0
1
1
0
1
2DH
45ns
0
0
1
0
1
0
0
0
28H
40ns
31
Module rank density
Address and command setup time
before clock (tIS)
-5C
-4A
Address and command hold time after
clock (tIH)
-5C
-4A
Data input setup time before clock
(tDS)
-5C
-4A
Data input hold time after clock (tDH)
-5C
-4A
1
0
0
0
0
0
0
0
80H
512M bytes
32
0
0
1
0
0
1
0
1
25H
0.25ns*
1
0
0
1
1
0
1
0
1
35H
0.35ns*
1
33
0
0
1
1
1
0
0
0
38H
0.38ns*
1
0
1
0
0
1
0
0
0
48H
0.48ns*
1
34
0
0
0
1
0
0
0
0
10H
0.10ns*
1
0
0
0
1
0
1
0
1
15H
0.15ns*
1
35
0
0
1
0
0
0
1
1
23H
0.23ns*
1
0
0
1
0
1
0
0
0
28H
0.28ns*
1
36
Write recovery time (tWR)
Internal write to read command delay
(tWTR)
-5C
-4A
Internal read to precharge command
delay (tRTP)
Memory analysis probe characteristics 0
0
0
1
1
1
1
0
0
3CH
15ns*
1
37
0
0
0
1
1
1
1
0
1EH
7.5ns*
1
0
0
1
0
1
0
0
0
28H
10ns*
1
38
0
0
0
1
1
1
1
0
1EH
7.5ns*
1
39
0
0
0
0
0
0
0
00H
TBD
40
Extension of Byte 41 and 42
Active command period (tRC)
-5C
-4A
Auto refresh to active/
Auto refresh command cycle (tRFC)
SDRAM tCK cycle max. (tCK max.)
Dout to DQS skew
-5C
-4A
Data hold skew (tQHS)
-5C
-4A
0
0
0
0
0
0
0
0
00H
Undefined
41
0
0
1
1
1
1
0
0
3CH
60ns*
1
0
0
1
1
0
1
1
1
37H
55ns*
1
42
0
1
1
0
1
0
0
1
69H
105ns*
1
43
1
0
0
0
0
0
0
0
80H
8ns*
1
44
0
0
0
1
1
1
1
0
1EH
0.30ns*
1
0
0
1
0
0
0
1
1
23H
0.35ns*
1
45
0
0
1
0
1
0
0
0
28H
0.40ns*
1
0
0
1
0
1
1
0
1
2DH
0.45ns*
1
46
PLL relock time
0
0
0
0
0
0
0
0
00H
Undefined
47 to 61
0
0
0
0
0
0
0
0
00H
相關(guān)PDF資料
PDF描述
EBE51ED8AGFA LJT 24C 12#16 12#12 SKT PLUG
EBE51ED8ABFA KPT SERIES
EBE51ED8ABFA-4A-E 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51RD8AEFA 512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51RD8AEFA-4A-E Circular Connector; No. of Contacts:5; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EBE51ED8AEFA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51ED8AEFA-6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51ED8AEFA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51ED8AGFA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51ED8AGFA-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)