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參數(shù)資料
| 型號(hào)： | EBE41RE4AAHA-5C-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight |
| 中文描述： | 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 16/22頁 |
| 文件大?。?/td> | 200K |
| 代理商： | EBE41RE4AAHA-5C-E |
EBE41RE4AAHA
Data Sheet E0629E20 (Ver. 2.0)
16
-5C
-4A
Frequency (Mbps)
533
400
Parameter
Symbol min.
max.
min.
max.
Unit
Notes
Write recovery time
Auto precharge write recovery +
precharge time
Internal write to read command delay
Internal read to precharge command
delay
Exit self refresh to a non-read command tXSNR
tWR
15
(tWR/tCK)+
(tRP/tCK)
7.5
15
(tWR/tCK)+
(tRP/tCK)
10
ns
tDAL
tCK
1
tWTR
ns
tRTP
7.5
7.5
ns
tRFC + 10
tRFC + 10
ns
Exit self refresh to a read command
Exit precharge power down to any non-
read command
Exit active power down to read
command
Exit active power down to read
command
(slow exit/low power mode)
CKE minimum pulse width (high and
low pulse width)
Output impedance test driver delay
Auto refresh to active/auto refresh
command time
Average periodic refresh interval
(0
°
C
≤
TC
≤
+85
°
C)
tXSRD
200
200
tCK
tXP
2
2
tCK
tXARD
2
2
tCK
3
tXARDS 6
AL
6
AL
tCK
2, 3
tCKE
3
3
tCK
tOIT
0
12
0
12
ns
tRFC
127.5
127.5
ns
tREFI
7.8
7.8
μ
s
(+85
°
C
<
TC
≤
+95
°
C)
tREFI
3.9
3.9
μ
s
Minimum time clocks remains ON after
CKE asynchronously drops low
Notes: 1. For each of the terms above, if not already an integer, round to the next higher integer.
2. AL: Additive Latency.
3. MRS A12 bit defines which active power down exit timing to be applied.
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(DC) level for a rising signal and VIL(DC) for a falling signal applied to the device under test.
CK
tDELAY tIS + tCK + tIH
tIS + tCK + tIH
ns
DQS
/DQS
tDS
tDH
tDS
tDH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
/CK
tIS
tIH
tIS
tIH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
Input Waveform Timing 1 (tDS, tDH)
Input Waveform Timing 2 (tIS, tIH)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EBE51ED8AEFA | Circular Connector; No. of Contacts:12; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| EBE51ED8AEFA-5C-E | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank) |
| EBE51ED8AEFA-6 | Circular Connector; No. of Contacts:8; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-8 RoHS Compliant: No |
| EBE51ED8AEFA-6E-E | Circular Connector; No. of Contacts:26; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-26 RoHS Compliant: No |
| EBE51ED8ABFA-5C-E | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBE41RE4ABHA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM |
| EBE41RE4ABHA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM |
| EBE41RE4ABHA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM |
| EBE41RE4ABHA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM |
| EBE41RE4ACFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM |
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