參數(shù)資料
型號(hào): EBE41RE4AAHA-4A-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight
中文描述: 512M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁數(shù): 18/22頁
文件大?。?/td> 200K
代理商: EBE41RE4AAHA-4A-E
EBE41RE4AAHA
Data Sheet E0629E20 (Ver. 2.0)
18
Pin Functions
CK, /CK (input pin)
The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross
point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross
point of the CK and the /CK. When a write operation, DQs are referred to the cross point of the DQS and the VREF
level. DQSs for write operation are referred to the cross point of the CK and the /CK.
/CS (input pin)
When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal
operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins)
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.
See “Command operation”.
A0 to A13 (input pins)
Row address (AX0 to AX13) is determined by the A0 to the A13 level at the cross point of the CK rising edge and the
VREF level in a bank active command cycle. Column address (AY0 to AY9, AY11) is loaded via the A0 to the A9
and A11 at the cross point of the CK rising edge and the VREF level in a read or a write command cycle. This
column address becomes the starting address of a burst operation.
A10 (AP) (input pin)
A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If
A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge
command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write
command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled.
BA0, BA1, BA2 (input pin)
BA0, BA1 and BA2 are bank select signals (BA). The memory array is divided into 8 banks
:
bank 0 to bank 7. (See
Bank Select Signal Table)
[Bank Select Signal Table]
BA0
BA1
BA2
Bank 0
L
L
L
Bank 1
H
L
L
Bank 2
L
H
L
Bank 3
H
H
L
Bank 4
L
L
H
Bank 5
H
L
H
Bank 6
L
H
H
Bank 7
H
H
H
Remark: H: VIH. L: VIL.
相關(guān)PDF資料
PDF描述
EBE41RE4AAHA-5C-E Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight
EBE51ED8AEFA Circular Connector; No. of Contacts:12; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
EBE51ED8AEFA-5C-E 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51ED8AEFA-6 Circular Connector; No. of Contacts:8; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-8 RoHS Compliant: No
EBE51ED8AEFA-6E-E Circular Connector; No. of Contacts:26; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-26 RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EBE41RE4AAHA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM (512M words x 72 bits, 2 Ranks)
EBE41RE4ABHA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM
EBE41RE4ABHA-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM
EBE41RE4ABHA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM
EBE41RE4ABHA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:4GB Registered DDR2 SDRAM DIMM