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參數(shù)資料
| 型號： | E35A21VBS |
| 廠商： | KEC Holdings |
| 英文描述： | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
| 中文描述： | 堆棧擴散硅二極管（發(fā)電機二極管汽車） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 194K |
| 代理商： | E35A21VBS |
2002. 4. 16
1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A21VBS, E35A21VBR
STACK SILICON DIFFUSED DIODE
Revision No : 4
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
Zener Voltage : 21V(Typ.)
POLARITY
E35A21VBS (+ Type) : Mark : ZG
E35A21VBR (- Type) : Mark : ZA
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ
11.5 MAX
Φ
12.75+0.09-0.00
Φ
1.3+
4.2 0.2
8.0+
TYP 0.5
Φ
10.0+
0.4 0.1
x
45
8.5 MAX
B-PF
0.2+0.1
28.35+
H
F
EI
D
G
B
J
K
A
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
V
F
I
FM
=100A
-
-
1.10
V
Zener Voltage
V
Z
I
Z
=10mA
19
21
23
V
Reverse Current
I
R
V
R
=18V
-
-
1
V
Transient Thermal Resistance
V
F
I
FM
=100A, I
M
=100mA, Pw=100mS
-
-
70
mV
Breakdown Voltage
V
br
I
rsm
=42A, Pw=10mS
-
-
32
V
Temperature Coefficient
T
I
Z
=10mA
-
15.7
-
mV/
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150
, V
R
=18V
-
-
100
A
Temperature Resistance
R
th
DC total junction to case
-
-
0.8
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
I
F(AV)
35
A
Peak 1 Cycle Surge Current
I
FSM
300 (60Hz)
A
Non-Repetitive Peak
Reverse Surge Current
(10mS)
I
RSM
42
A
Transient Peak Reverse Voltage
V
RSM
19
V
Peak Reverse Voltage
V
RM
16
V
Junction Temperature
T
j
-40
215
Storage Temperature Range
T
stg
-40
215
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