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參數(shù)資料
| 型號： | E35A23VS |
| 廠商： | KEC Holdings |
| 英文描述： | STACK SILICON DIFFUSED DIODE |
| 中文描述： | 堆棧擴散硅二極管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 71K |
| 代理商： | E35A23VS |
2001. 2. 8
1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A23VS, E35A23VR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
Zener Voltage : 23V(Typ.)
POLARITY
E35A23VS E35A23VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25
)
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 0.3
13.5 0.3
24.0+
+
+
D3
E
F
G
H
T
D2
2.0 0.3
5.0+
2.5+
1.9+
9.0+
1.0 0.3
4.4 0.5
0.6+
8.5+
10.0 0.3
5.0 0.3
4.5 0.3
+
+
+
DIM
MILLIMETERS
+
A3
A2
A1
D3
E
F
G
D
D
T
H
C
C
B
B
MR
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
V
FM
I
FM
=100A
-
-
1.05
V
Zener Voltage
V
Z
I
Z
=10mA
20
23
26
V
Repetitive Peak Reverse Curren
I
RRM
V
R
=V
RM
-
-
10
A
Transient Thermal Resistance
I
RRM
I
FM
=100A, Pw=100mS
-
-
90
mV
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150
, V
R
=V
RM
-
-
2.5
mA
Reverse recovery Time
Trr
I
F
=100mA, -I
R
=100mA
90% Recovery Point
-
-
5.0
S
Temperature Resistance
Rth
DC total junction to case
-
-
1.0
/W
Thermal runway Temperature
Trwy
V
R
=17V, I
R
=5mA
200
-
-
Temperature Coefficient
T
I
R
=10mA
-
18
-
mV/
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
I
F(AV)
35
A
Peak 1 Cycle Surge Current
I
FSM
450 (50Hz)
A
Peak Reverse Surge Current
(I
RSM
/2=10ms)
I
RSM
70
A
Peak Revese Over Voltage
V
RSM
70
V
Peak Revese Voltage
V
RM
17
V
Junction Temperature
T
j
-40
200
Storage Temperature Range
T
stg
-40
150
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