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參數(shù)資料
| 型號： | E2081606_PF08127B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 189K |
| 代理商： | E2081606_PF08127B |
PF08127B
MOS FET Power Amplifier Module
for E-GSM and DCS1800/1900 Triple Band Handy Phone
ADE-208-1606 (Z)
Rev.0
Oct. 2002
Application
Triple band amplifier for
E-GSM (880 MHz to 915 MHz), DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).
For 3.5 V & GPRS Class12 operation compatible
Features
All in one including output matching circuit
Simple external circuit
Simple power control
High gain 3stage amplifier : 0 dBm input Typ
Lead less thin & Small package : 8.0
×
10.0 mm Typ
×
1.5 mm Max
High efficiency : 55% Typ at 35.0 dBm for E-GSM
47% Typ at 32.5 dBm for DCS1800
47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
1:
2:
3:
4:
5:
6:
7:
8:
G:
Pin
GSM
Vapc
Vdd1
Pout
GSM
Pout
DCS
Vdd2
Vctl
Pin
DCS
GND
RF-Q-8
12
34
G
5
87
6
G
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