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參數(shù)資料
| 型號(hào)： | E2081606_PF08127B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場(chǎng)效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 189K |
| 代理商： | E2081606_PF08127B |
PF08127B
Rev.0, Oct. 2002, page 12 of 14
PCS mode (1850MHz to 1910 MHz)
(cont.)
PCS mode (1850 MHz) Idd vs. Pout
0.01
0.1
1
10
–50 –40
–20
–30
–10
Pout (dBm)
0
10
20
30
40
I
PCS mode (1850 MHz) Pout vs. Pin
29
31
33
30
32
34
35
–8
–6
–4
–2
0
2
4
6
8
Pin (dBm)
P
29
31
33
30
32
34
35
P
PCS mode (1910 MHz) Pout vs. Pin
PCS mode (1910 MHz) Idd vs. Pout
1600 1650 1700 1750
1850
1800
1900 1950 2000
Freq (MHz)
DCS, PCS mode Pout, Eff vs. Freq
31
30
32
33
34
35
P
35
40
60
55
50
45
E
Vdd = 3.5 V, Tc = 25
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.1 V, Tc = 85
°
C
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
0.01
0.1
1
10
–50 –40
–20
–30
–10
Pout (dBm)
0
10
20
30
40
I
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Vdd = 3.5 V
Tc = 25
°
C
Vapc = 2.2 V
–8
–6
–4
–2
0
2
4
6
8
Pin (dBm)
Vdd = 3.5 V, Tc = 25
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.1 V, Tc = 85
°
C
Vapc = 2.2 V
PCS mode Pout vs. Vdd
31
32
33
34
35
36
3
3.2
3.4
3.6
3.8
4
4.2
4.4
Vdd (V)
P
Pout:Vapc = 2.2 V
Eff:Pout = 32 dBm
Pout
Eff
1850 MHz
1910 MHz
Pin = 0 dBm
Vapc = 2.2 V
Tc = 25
°
C
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