| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BSL308PE L6327 | Infineon Technologies | MOSFET P-CH 30V 2A 6TSOP | 5,965 | 1:$0.69000 10:$0.55400 25:$0.48520 100:$0.41580 250:$0.35912 500:$0.30870 1,000:$0.23940 |
| BSL308PE L6327 | Infineon Technologies | MOSFET P-CH 30V 2A 6TSOP | 3,000 | 3,000:$0.19530 6,000:$0.18270 15,000:$0.17010 30,000:$0.16065 75,000:$0.15750 150,000:$0.15120 |
| BSL806N L6327 | Infineon Technologies | MOSFET N-CH 20V 2.3A 6TSOP | 5,896 | 1:$0.68000 10:$0.54200 25:$0.47400 100:$0.40620 250:$0.35084 500:$0.30160 1,000:$0.23389 |
| BSL806N L6327 | Infineon Technologies | MOSFET N-CH 20V 2.3A 6TSOP | 5,896 | 1:$0.68000 10:$0.54200 25:$0.47400 100:$0.40620 250:$0.35084 500:$0.30160 1,000:$0.23389 |
| BSL806N L6327 | Infineon Technologies | MOSFET N-CH 20V 2.3A 6TSOP | 3,000 | 3,000:$0.19081 6,000:$0.17850 15,000:$0.16619 30,000:$0.15695 75,000:$0.15388 150,000:$0.14772 |
| BSD235C H6327 | Infineon Technologies | MOSFET N/P-CH 20V SOT363 | 6,890 | 1:$0.55000 10:$0.39200 25:$0.32360 100:$0.26100 250:$0.18792 500:$0.15138 1,000:$0.11745 |
| BSD235C H6327 | Infineon Technologies | MOSFET N/P-CH 20V SOT363 | 6,890 | 1:$0.55000 10:$0.39200 25:$0.32360 100:$0.26100 250:$0.18792 500:$0.15138 1,000:$0.11745 |
| BSD235C H6327 | Infineon Technologies | MOSFET N/P-CH 20V SOT363 | 6,000 | 3,000:$0.09396 6,000:$0.08874 15,000:$0.08091 30,000:$0.07569 75,000:$0.06786 150,000:$0.06525 |
| BSD840N H6327 | Infineon Technologies | MOSFET N-CH 20V 0.88A SOT363 | 2,842 | 1:$0.60000 10:$0.42700 25:$0.33720 100:$0.25620 250:$0.18148 500:$0.14518 1,000:$0.11102 |
| BSD840N H6327 | Infineon Technologies | MOSFET N-CH 20V 0.88A SOT363 | 2,842 | 1:$0.60000 10:$0.42700 25:$0.33720 100:$0.25620 250:$0.18148 500:$0.14518 1,000:$0.11102 |
| BSD840N H6327 | Infineon Technologies | MOSFET N-CH 20V 0.88A SOT363 | 0 | 3,000:$0.08540 6,000:$0.07686 15,000:$0.06832 30,000:$0.06405 75,000:$0.05679 150,000:$0.05338 |
| BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 5,590 | 1:$0.49000 10:$0.34500 25:$0.28520 100:$0.23000 250:$0.16560 500:$0.13340 1,000:$0.10350 |
| BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 5,590 | 1:$0.49000 10:$0.34500 25:$0.28520 100:$0.23000 250:$0.16560 500:$0.13340 1,000:$0.10350 |
| BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 3,000 | 3,000:$0.08280 6,000:$0.07820 15,000:$0.07130 30,000:$0.06670 75,000:$0.05980 150,000:$0.05750 |
| 2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 5,964 | 1:$0.44000 10:$0.31500 25:$0.24880 100:$0.18900 250:$0.13388 500:$0.10710 1,000:$0.08190 |
| 2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 5,964 | 1:$0.44000 10:$0.31500 25:$0.24880 100:$0.18900 250:$0.13388 500:$0.10710 1,000:$0.08190 |
| 2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 3,000 | 3,000:$0.06300 6,000:$0.05670 15,000:$0.05040 30,000:$0.04725 75,000:$0.04190 150,000:$0.03938 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) P 溝道（雙） |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 2A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 80 毫歐 @ 2A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 11µA |
| 閘電荷(Qg) @ Vgs: | 5nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 500pF @ 15V |
| 功率 - 最大: | 500mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-74，SOT-457 |
| 供應(yīng)商設(shè)備封裝: | PG-TSOP6-6 |
| 包裝: | 剪切帶 (CT) |