| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 5,590 | 1:$0.49000 10:$0.34500 25:$0.28520 100:$0.23000 250:$0.16560 500:$0.13340 1,000:$0.10350 |
| BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 5,590 | 1:$0.49000 10:$0.34500 25:$0.28520 100:$0.23000 250:$0.16560 500:$0.13340 1,000:$0.10350 |
| BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 3,000 | 3,000:$0.08280 6,000:$0.07820 15,000:$0.07130 30,000:$0.06670 75,000:$0.05980 150,000:$0.05750 |
| 2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 5,964 | 1:$0.44000 10:$0.31500 25:$0.24880 100:$0.18900 250:$0.13388 500:$0.10710 1,000:$0.08190 |
| 2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 5,964 | 1:$0.44000 10:$0.31500 25:$0.24880 100:$0.18900 250:$0.13388 500:$0.10710 1,000:$0.08190 |
| 2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 3,000 | 3,000:$0.06300 6,000:$0.05670 15,000:$0.05040 30,000:$0.04725 75,000:$0.04190 150,000:$0.03938 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) N 溝道（雙） |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 950mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 350 毫歐 @ 950mA，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1.2V @ 1.6µA |
| 閘電荷(Qg) @ Vgs: | 0.32nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 63pF @ 10V |
| 功率 - 最大: | 500mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSSOP，SC-88，SOT-363 |
| 供應(yīng)商設(shè)備封裝: | PG-SOT363-6 |
| 包裝: | Digi-Reel® |