元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
BSD235C H6327 | Infineon Technologies | MOSFET N/P-CH 20V SOT363 | 6,890 | 1:$0.55000 10:$0.39200 25:$0.32360 100:$0.26100 250:$0.18792 500:$0.15138 1,000:$0.11745 |
BSD235C H6327 | Infineon Technologies | MOSFET N/P-CH 20V SOT363 | 6,000 | 3,000:$0.09396 6,000:$0.08874 15,000:$0.08091 30,000:$0.07569 75,000:$0.06786 150,000:$0.06525 |
BSD840N H6327 | Infineon Technologies | MOSFET N-CH 20V 0.88A SOT363 | 2,842 | 1:$0.60000 10:$0.42700 25:$0.33720 100:$0.25620 250:$0.18148 500:$0.14518 1,000:$0.11102 |
BSD840N H6327 | Infineon Technologies | MOSFET N-CH 20V 0.88A SOT363 | 2,842 | 1:$0.60000 10:$0.42700 25:$0.33720 100:$0.25620 250:$0.18148 500:$0.14518 1,000:$0.11102 |
BSD840N H6327 | Infineon Technologies | MOSFET N-CH 20V 0.88A SOT363 | 0 | 3,000:$0.08540 6,000:$0.07686 15,000:$0.06832 30,000:$0.06405 75,000:$0.05679 150,000:$0.05338 |
BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 5,590 | 1:$0.49000 10:$0.34500 25:$0.28520 100:$0.23000 250:$0.16560 500:$0.13340 1,000:$0.10350 |
BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 5,590 | 1:$0.49000 10:$0.34500 25:$0.28520 100:$0.23000 250:$0.16560 500:$0.13340 1,000:$0.10350 |
BSD235N H6327 | Infineon Technologies | MOSFET N-CH DUAL 20V SOT363 | 3,000 | 3,000:$0.08280 6,000:$0.07820 15,000:$0.07130 30,000:$0.06670 75,000:$0.05980 150,000:$0.05750 |
2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 5,964 | 1:$0.44000 10:$0.31500 25:$0.24880 100:$0.18900 250:$0.13388 500:$0.10710 1,000:$0.08190 |
2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 5,964 | 1:$0.44000 10:$0.31500 25:$0.24880 100:$0.18900 250:$0.13388 500:$0.10710 1,000:$0.08190 |
2N7002DW H6327 | Infineon Technologies | MOSFET 2N-CH 60V 0.3A SOT363 | 3,000 | 3,000:$0.06300 6,000:$0.05670 15,000:$0.05040 30,000:$0.04725 75,000:$0.04190 150,000:$0.03938 |
類別: | 分離式半導體產品 |
---|---|
FET 型: | N 和 P 溝道 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 950mA,530mA |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 350 毫歐 @ 950mA,4.5V |
Id 時的 Vgs(th)(最大): | 1.2V @ 1.6µA |
閘電荷(Qg) @ Vgs: | 0.34nC @ 4.5V |
輸入電容 (Ciss) @ Vds: | 47pF @ 10V |
功率 - 最大: | 500mW |
安裝類型: | 表面貼裝 |
封裝/外殼: | 6-TSSOP,SC-88,SOT-363 |
供應商設備封裝: | PG-SOT363-6 |
包裝: | 剪切帶 (CT) |