| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI7900AEDN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 1212-8 PPAK | 0 | 3,000:$0.47600 6,000:$0.45220 15,000:$0.43350 30,000:$0.42160 75,000:$0.40800 |
| SI5904DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1206-8 | 750 | 1:$1.22000 25:$0.96000 100:$0.86400 250:$0.75200 500:$0.67200 1,000:$0.52800 |
| SI5904DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1206-8 | 750 | 1:$1.22000 25:$0.96000 100:$0.86400 250:$0.75200 500:$0.67200 1,000:$0.52800 |
| SI5904DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1206-8 | 0 | 3,000:$0.44800 6,000:$0.42560 15,000:$0.40800 30,000:$0.39680 75,000:$0.38400 |
| SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 423 | 1:$1.19000 25:$0.93600 100:$0.84240 250:$0.73320 500:$0.65520 1,000:$0.51480 |
| SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 423 | 1:$1.19000 25:$0.93600 100:$0.84240 250:$0.73320 500:$0.65520 1,000:$0.51480 |
| SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 0 | 2,500:$0.43680 5,000:$0.41496 12,500:$0.39780 25,000:$0.38688 62,500:$0.37440 |
| SI3586DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 695 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| SI3586DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 695 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個 N 溝道（雙） |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 6A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 26 毫歐 @ 8.5A，4.5V |
| Id 時的 Vgs(th)（最大）: | 900mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 16nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |