元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
SI5904DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1206-8 | 750 | 1:$1.22000 25:$0.96000 100:$0.86400 250:$0.75200 500:$0.67200 1,000:$0.52800 |
SI5904DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1206-8 | 0 | 3,000:$0.44800 6,000:$0.42560 15,000:$0.40800 30,000:$0.39680 75,000:$0.38400 |
SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 423 | 1:$1.19000 25:$0.93600 100:$0.84240 250:$0.73320 500:$0.65520 1,000:$0.51480 |
SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 423 | 1:$1.19000 25:$0.93600 100:$0.84240 250:$0.73320 500:$0.65520 1,000:$0.51480 |
SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 0 | 2,500:$0.43680 5,000:$0.41496 12,500:$0.39780 25,000:$0.38688 62,500:$0.37440 |
SI3586DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 695 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
SI3586DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 695 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | 2 個(gè) N 溝道(雙) |
FET 特點(diǎn): | 邏輯電平門(mén) |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 3.1A |
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 75 毫歐 @ 3.1A,4.5V |
Id 時(shí)的 Vgs(th)(最大): | 1.5V @ 250µA |
閘電荷(Qg) @ Vgs: | 6nC @ 4.5V |
輸入電容 (Ciss) @ Vds: | - |
功率 - 最大: | 1.1W |
安裝類型: | 表面貼裝 |
封裝/外殼: | 8-SMD,扁平引線 |
供應(yīng)商設(shè)備封裝: | 1206-8 ChipFET? |
包裝: | 剪切帶 (CT) |