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    分離式半導(dǎo)體產(chǎn)品 IPB260N06N3 G品牌、價格、PDF參數(shù)
    

    


    IPB260N06N3 G • 品牌、價格
    


    


    


    
元器件型號
廠商
描述
數(shù)量
價格

    
    
 

    
IPB260N06N3 G
Infineon Technologies
MOSFET N-CH 60V 27A TO263-3
1,930
1:$1.13000
    
10:$1.01100
    
25:$0.89200
    
100:$0.80270
    
250:$0.69864
    
500:$0.62434
    		

    

    
IPB260N06N3 G
Infineon Technologies
MOSFET N-CH 60V 27A TO263-3
1,000
1,000:$0.44595
    
2,000:$0.41622
    
5,000:$0.39541
    
10,000:$0.37906
    
25,000:$0.36865
    
50,000:$0.35676
    		

    
    

    
    

    


    IPB260N06N3 G • PDF參數(shù)
    


    



    


    
類別:

分離式半導(dǎo)體產(chǎn)品


    

    
FET 型:

MOSFET N 通道，金屬氧化物


    

    
FET 特點:

標(biāo)準(zhǔn)


    

    
漏極至源極電壓(Vdss):

60V


    

    
電流 - 連續(xù)漏極(Id) @ 25° C:

27A


    

    
開態(tài)Rds（最大）@ Id, Vgs @ 25° C:

25.7 毫歐 @ 27A，10V


    

    
Id 時的 Vgs(th)（最大）:

4V @ 11µA


    

    
閘電荷(Qg) @ Vgs:

15nC @ 10V


    

    
輸入電容 (Ciss) @ Vds:

1200pF @ 30V


    

    
功率 - 最大:

36W


    

    
安裝類型:

表面貼裝


    

    
封裝/外殼:

TO-263-3，D²Pak（2 引線+接片），TO-263AB


    

    
供應(yīng)商設(shè)備封裝:

PG-TO263-2


    

    
包裝:

剪切帶 (CT)