| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BSC032NE2LS | Infineon Technologies | MOSFET N-CH 25V 22A TDSON-8 | 9,992 | 1:$1.53000 10:$1.37100 25:$1.20960 100:$1.08860 250:$0.94752 500:$0.84672 1,000:$0.66528 2,500:$0.62496 |
| IPD088N06N3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | 4,750 | 1:$1.44000 10:$1.28500 25:$1.13360 100:$1.02030 250:$0.88808 500:$0.79360 1,000:$0.62354 |
| IPD088N06N3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | 4,750 | 1:$1.44000 10:$1.28500 25:$1.13360 100:$1.02030 250:$0.88808 500:$0.79360 1,000:$0.62354 |
| IPD079N06L3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | 4,300 | 1:$1.44000 10:$1.28500 25:$1.13360 100:$1.02030 250:$0.88808 500:$0.79360 1,000:$0.62354 |
| IPD079N06L3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | 4,300 | 1:$1.44000 10:$1.28500 25:$1.13360 100:$1.02030 250:$0.88808 500:$0.79360 1,000:$0.62354 |
| BSO080P03NS3E G | Infineon Technologies | MOSFET P-CH 30V 12A 8DSO | 4,970 | 1:$1.14000 10:$1.02300 25:$0.90320 100:$0.81270 250:$0.70736 500:$0.63210 1,000:$0.49665 |
| BSO080P03NS3E G | Infineon Technologies | MOSFET P-CH 30V 12A 8DSO | 4,970 | 1:$1.14000 10:$1.02300 25:$0.90320 100:$0.81270 250:$0.70736 500:$0.63210 1,000:$0.49665 |
| BSO080P03NS3E G | Infineon Technologies | MOSFET P-CH 30V 12A 8DSO | 0 | 2,500:$0.42140 5,000:$0.40033 12,500:$0.38378 25,000:$0.37324 62,500:$0.36120 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 84A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3.2 毫歐 @ 30A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 16nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1200pF @ 12V |
| 功率 - 最大: | 37W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應(yīng)商設(shè)備封裝: | PG-TDSON-8 |
| 包裝: | Digi-Reel® |