| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| IPD079N06L3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | 4,300 | 1:$1.44000 10:$1.28500 25:$1.13360 100:$1.02030 250:$0.88808 500:$0.79360 1,000:$0.62354 |
| BSO080P03NS3E G | Infineon Technologies | MOSFET P-CH 30V 12A 8DSO | 4,970 | 1:$1.14000 10:$1.02300 25:$0.90320 100:$0.81270 250:$0.70736 500:$0.63210 1,000:$0.49665 |
| BSO080P03NS3E G | Infineon Technologies | MOSFET P-CH 30V 12A 8DSO | 4,970 | 1:$1.14000 10:$1.02300 25:$0.90320 100:$0.81270 250:$0.70736 500:$0.63210 1,000:$0.49665 |
| BSO080P03NS3E G | Infineon Technologies | MOSFET P-CH 30V 12A 8DSO | 0 | 2,500:$0.42140 5,000:$0.40033 12,500:$0.38378 25,000:$0.37324 62,500:$0.36120 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 50A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 7.9 毫歐 @ 50A，10V |
| Id 時的 Vgs(th)（最大）: | 2.2V @ 34µA |
| 閘電荷(Qg) @ Vgs: | 29nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 4900pF @ 30V |
| 功率 - 最大: | 79W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應商設備封裝: | PG-TO252-3 |
| 包裝: | 剪切帶 (CT) |